| 1 | A 3-dimensional model for step coverage by atomic layer deposition in a patterned structure Kim J.-Y.; Kim J.-H.; Ahn J.-H.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.917 -, 2005-10-16 |
| 2 | A Direct Determination of Resistance and Capacitances for Polysilicon Emitter Bipolar Transistors using Simple Expressions of Z Parameters Sang-Won Kang, Proc. of 3rd ICVC, pp.420 - 423, 1993 |
| 3 | A New Annealing Method to Obtain High Quality Poly-Si Sang-Won Kang, Mat. Res. Soc. Symp. Proc., pp.745 -, 1993 |
| 4 | A New Low-Resistance Antifuse with Planar Metal/dielectric/Poly-Si/dielectric/metal Structure Kang, Sang Won; Ahn, Byung Tae, Extended Abstracts of the 1996 International Conference on Solid State Devices and Materials, pp.839 - 841, 1996-01-01 |
| 5 | a-step을 이용한 다결정 실리콘 빔의 잔류응력 기울기와 탄성계수 측정 방법 강상원, 한국재료학회 춘계학술발표대회, 1996 |
| 6 | Buried Storage Capacitor under the Access Transistor(BUT) Cell for ULSI using Wafer Bonding Technology 강상원, 한국전자공학회, 한/미 마이크로일렉트로닉스 공동 워크샵, 1991 |
| 7 | Characteristics of MOCVD Aluminium Films Deposited with DMEAA Kang, Sang Won; Ahn, Byung Tae, Proc. of IUMRS Int. Conf. Asia, pp.825 - 825, 1995-01-01 |
| 8 | Cu Multilevel Metallization in ULSI Circuits 강상원, 제4회 한국반도체학술대회 논문집, pp.387 - 389, 1997 |
| 9 | Cycle-CVD법으로 증착된 TiN 박막의 ALD 증착기구와 특성에 관한 연구 강상원, 제5회 한국반도체학술대회 논문집, pp.329 - 330, 1998 |
| 10 | Cyclic TiN CVD using TEMAT, Ar and NH3 강상원, 제4회 한국반도체학술대회 논문집, pp.417 - 419, 1997 |
| 11 | Double SOI Wafer Fabrication by Wafer Bonding Technology 강상원, 한국전자공학회 1st SOI Workshop, 1990 |
| 12 | Dynamic Studies on the Formation of Voids in Wafer Bonding 강상원, 한국전자공학회, 92춘계전자공학회 논문집, 1992 |
| 13 | ECR-PECVD와 RF-PECVD법에 의해 증착된 TiN 박막의 특성비교 이원종; 전병혁; 김종석; 이응직; 백종태; 강상원, 한국요업학회 추계학술연구발표회 1994, pp.0 - 0, 1994-01-01 |
| 14 | Effects of film thickness and preferred orientation on the dielectric constants of HF-aluminate films deposited by PEALD Moon H.-S.; Joo D.; Park P.-K.; Kang S.-W., Atomic Layer Deposition Applications 4 - 214th ECS Meeting, pp.343 - 348, 2008-10-13 |
| 15 | Focusing and Leveling System Using PSDs for the Wafer Steppers KANG SANG WON, SPIE997, 1994-01-01 |
| 16 | Improved Electrical Properties of Mixed and Nanolaminated Ta2O5-SiO2 Thin Film Prepared by PEALD 강상원, 제 12회 반도체학술대회, pp.G18 -, 2004 |
| 17 | Improvement of Dielectric Properties of PEALD SrTiO3 Thin Films by Insertion SrO Interlayer on Ru Bottom Electrode Sang-Won Kang, AVS 6th International Conference on Atomic Layer Deposition, 2006 |
| 18 | Improvement of Grain Size by Crystallization of Double-Layer Amorphous Silicon Films Kang, Sang Won; Ahn, Byung Tae, Mat. Res. Soc. Symp. Proc., pp.111 - 116, 1994-01-01 |
| 19 | Leakage Current Reduction at the Gate Edge of SDB SOI NMOS Transistors Sang-Won Kang, 1992 IEEE International SOI Conference Proceedings, pp.50 - 51, 1992 |
| 20 | MBE 방법으로 증착한 Si1-xGex 박막의 응력완화 강상원, 한국재료학회 춘계학술발표대회, 1996 |
| 21 | Measurement of Critical Thickness of Si1-xGex Heterostructures Grown by Silicon Molecular Beam Epitaxy : Comparison with Theoretical Models 강상원, 한국물리학회, 92추계물리학회, 1992 |
| 22 | Measurement of thermal expansion coefficient of poly-si using microgauge sensors Chae J.-H.; Lee J.-Y.; Kang S.-W., Smart Electronics and MEMS, v.3242, pp.202 - 211, 1997-12-11 |
| 23 | Modeling of Small Size Effect for MOSFET's Considering the Gradual Doping Profile in the Source/drain Region Sang-Won Kang, Proc. of 19th Annul Conf. on Modeling and Simulation, pp.1905 -, 1988 |
| 24 | Plasma Enhanced Atomic Layer Deposition of SrTiO3 Thin Films Using Sr(DPM)2 and TTIP KANG SANG WON, 5th International AVS Conference on Microelectronics and Interfaces, pp.0 - 0, 2004-02-01 |
| 25 | Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma KANG SANG WON, 5th International AVS Conference on Microelectronics and Interfaces, pp.107 - 109, 2004-02-01 |
| 26 | Plasma Enhanced Atomic Layer Deposition of Ta-N films using TaF5 with N2/H2/Ar mixed gas plasma KANG SANG WON, Atomic Layer Deposition (ALD) 2004, pp.0 - 0, 2004-08-01 |
| 27 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4, SiH4, and N2/H2/Ar Plasma KANG SANG WON, Atomic Layer Deposition (ALD) 2002, 2002-01-01 |
| 28 | Plasma-Enhanced Atomic Layer Deposition of Ru-TiN Thin Films for the Application of Cu Diffusion Barrier KANG SANG WON, AVS 6th International Conference on Atomic Layer Deposition, pp.0 - 0, 2004-08-01 |
| 29 | Plasma-Enhanced Atomic Layer Deposition of TiAlN KANG SANG WON, 4th International AVS Conference on Microelectronics and Interfaces, pp.0 - 0, 2003-01-01 |
| 30 | Plasma-enhanced atomic layer deposition of TiN thin film using TiCl4 and N2/H2/Ar radicals KANG SANG WON, Atomic layer Deposition (ALD) 2002, 2002-01-01 |
| 31 | Plasma-Enhanced Atomic Layer Depposition of HfO2 Thin Films Using Oxygen Plasma Sang-Won Kang, 208th Meeting of The Electrochemical Society, 2005 |
| 32 | Precise thickness and composition control of multi-component thin films in ALP Chung H.-S.; Kang S.-W., 6th International Conference on Semiconductor Technology, ISTC2007, pp.71 - 80, 2007-03-18 |
| 33 | Redistribution of Boron in Heavily Doped Silicon Grown by Silicon Molecular Beam Epitaxy : Dependence on Growth Temperature 강상원, 한국물리학회, 92추계물리학회, 1992 |
| 34 | Reliability Characteristics of the Thin Interlevel Poly Silicon Oxide for EEPROM Device Sang-Won Kang, ESC, Extended Abstract, pp.241 -, 1987 |
| 35 | Selective Characterization & Complete Planarization of Plug with Aluminum by Cycle Chemical Vapor Deposition KANG SANG WON, The 4th International Conference on Electronic Materials Abstract Book, pp.105 -, 1998-01-01 |
| 36 | SIlicon Direct Bonding(SDB) SOI nMOS 트랜지스터의 기생채널에 의한 누설전류 특성 강상원, 한국전자공학회, 합동학술발표회 논문집 제10호, 제1권, pp.189 -, 1992 |
| 37 | SIMOX 기판을 이용한 MOSFET의 제조 및 특성분석 강상원, 한국전자공학회 1st SOI Workshop, 1990 |
| 38 | SOI MOS 트랜지스터의 substrate floating 효과 강상원, 한국전자공학회 하계종합학술대회 논문집, 1990 |
| 39 | SOI MOSFET with Grounded Body Potential by using the Silicon Direct Bonding(SDB) Technology Sang-Won Kang, IEEE Proc. of the SOI Conf., pp.96 -, 1993 |
| 40 | Structural and Electrical Characteristics of HfO2/Al2O3 Nanolaminate Films Sang-Won Kang, AVS 6th International Conference on Atomic Layer Deposition, 2006 |
| 41 | Studies on Microvoids at the Interface of Direct Bonded Silicon Wafers 강상원, 제2회 한국진공학회 학술발표회, 1992 |
| 42 | Studies on the Microvoids at the Interface of Direct Bonded Silicon Wafers Sang-Won Kang, ESC Proc. of the 1st Interanational Conf. on Semiconductor Wafer Bonding, Science, Technology and Application, pp.102 -, 1991 |
| 43 | Substrate Floating Effect of P-Channel SOIMOSFET's Choochon Lee; Sang-Won Kang, Proc. IEEEE SOS/SOI Conf.,, pp.87 - 88, 1990 |
| 44 | Ta(OC2H5)5와 NH3를 이용한 탄탈륨 산화막의 원자층 단위 증착 및 특성에 관한 연구 강상원, 한국진공학회 제14회 학술발표회 논문요약집, pp.75 - 76, 1998 |
| 45 | Ta2O5-SiO2 Nano- Laminated Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition KANG SANG WON, Atomic layer deposition (ALD) 2004, pp.0 - 0, 2004-08-01 |
| 46 | Tantalum Oxide Films grown by plasma enhanced atomic layer deposition KANG SANG WON, 2nd International AVS Conference on Microelectronics and Interfaces, 2001-01-01 |
| 47 | Tantalum Oxide Films Grown by Plasma-Enhanced Atomic Layer Deposition KANG SANG WON, The Second Asian Conference on Chemical Vapor Deposition, pp.190 - 193, 2001-01-01 |
| 48 | The Characterization of MOS Transistor Fabricated in Oxygen Implanted SOI 강상원, 한국물리학회 춘계학술대회, 1990 |
| 49 | The Charateristics of SOI n-MOSFET's by Bonding and Etch-back Technology Sang-Won Kang, Proc. of 2nd ICVC, pp.268 -, 1991 |
| 50 | The Dynamic Studies on Voids Formation during making in Silicon Wafer Bonding 강상원, 한국전자공학회, 합동학술발표회 논문집 제10호, 제1권, pp.219 -, 1992 |
| 51 | The Electrical Properties of Polyoxide Depending on the Polycrystalline Si Formation Conditions Lee, JeongYong; Sang-Won Kang, Materials Research Society, pp.315 - 315, 1990-12-01 |
| 52 | The Electrical Properties of Thermal Annealed PECVD Silicon Nitride Films Sang-Won Kang, Proc. of International Symp. on Trends and New Applications in Thin Films, pp.239 -, 1987 |
| 53 | The Formation of Resist Proflie by TMSDEA-Treatment and Dry Development Based on Oxygen-Helium RIE Sang-Won Kang, Proc. of International Conf. on Microlithograpy, 1990 |
| 54 | Theoretical Prediction of Surface Evolution in Atomic Layer Deposition 강상원, 제 12회 반도체학술대회, pp.PB41 -, 2004 |
| 55 | Threshold Voltage Model for Short Channel MOSFET's using the Step Profile Approximation Sang-Won Kang, Proc. of 18th Annul Conf. on modeling and Simulation, pp.719 -, 1987 |
| 56 | Ti-Al-O Atomic Layer Deposition as New High-k Dielectrics 강상원, 제 12회 반도체학술대회, pp.PB44 -, 2004 |
| 57 | Titanium Dioxide Films Grown by Plasma-Enhanced Atomic Layer Deposition KANG SANG WON, 3rd International AVS Conference on Microelectronics and Interfaces, 2002-01-01 |
| 58 | Two step annealing of iridium thin films prepared by plasma-enhanced atomic layer deposition Kim S.-W.; Kwon S.-H.; Kang S.-W., Atomic Layer Deposition Applications 4 - 214th ECS Meeting, pp.309 - 314, 2008-10-13 |
| 59 | Two-step atomic layer deposition for tantalum nitride by nitridation of tantalum with ammonia Kwon J.-D.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.919 -, 2005-10-16 |
| 60 | Ultra thin copper film deposition by metal-organic chemical vapor deposition on ruthenium thin film Kwak D.-K.; Lee H.-B.; Kang S.-W., 208th Meeting of The Electrochemical Society, pp.1179 -, 2005-10-16 |
