Redistribution of Boron in Heavily Doped Silicon Grown by Silicon Molecular Beam Epitaxy : Dependence on Growth Temperature

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Issue Date
1992
Language
KOR
Citation

한국물리학회, 92추계물리학회

URI
http://hdl.handle.net/10203/113416
Appears in Collection
MS-Conference Papers(학술회의논문)
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