SIlicon Direct Bonding(SDB) SOI nMOS 트랜지스터의 기생채널에 의한 누설전류 특성

Cited 0 time in webofscience Cited 0 time in scopus
  • Hit : 330
  • Download : 0
Issue Date
1992
Language
KOR
Citation

한국전자공학회, 합동학술발표회 논문집 제10호, 제1권, pp.189 -

URI
http://hdl.handle.net/10203/113963
Appears in Collection
MS-Conference Papers(학술회의논문)
Files in This Item
There are no files associated with this item.

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0