Browse "EE-Journal Papers(저널논문)" by Author Yang, Kyounghoon
Showing results 1 to 41 of 41
| 16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER GUTIERREZAITKEN, AL; Yang, Kyounghoon; ZHANG, X; HADDAD, GI; BHATTACHARYA, P; LUNARDI, LM, IEEE PHOTONICS TECHNOLOGY LETTERS, v.7, no.11, pp.1339 - 1341, 1995-11 |
| 20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212, 2005 |
| 200-mm Si CMOS Process-Compatible Integrated Passive Device Stack for Millimeter-Wave Monolithic 3-D Integration Park, Minsik; Song, Jonghyun; Jeong, Jaeyong; Lim, Jeong-Taek; Song, Jae-Hyeok; Lee, Won-Chul; Sim, Gapseop; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.10, pp.5257 - 5264, 2023-10 |
| A 24-GHz Low-Power RTD-Based ON-OFF Keying Oscillator With an RTD Pair Configuration Park, Jaehong; Lee, Joo-Seok; Yang, Kyounghoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.28, no.6, pp.521 - 523, 2018-06 |
| A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation Lee, Kiwon; Lee, Byoungwook; Yoon, Sunwoong; Hong, Jung-ho; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7, 2013-07 |
| A SELF-CONSISTENT MODEL OF GAMMA-X MIXING IN GAAS/ALAS/GAAS QUANTUM-WELL STRUCTURES USING THE QUANTUM TRANSMITTING BOUNDARY METHOD SUN, JP; MAINS, RK; Yang, Kyounghoon; HADDAD, GI, JOURNAL OF APPLIED PHYSICS, v.74, no.8, pp.5053 - 5060, 1993-10 |
| A varactor-tuned MMIC VCO using InP-based RTD/HBT technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, v.45, no.5, pp.408 - 411, 2005-06 |
| An HSPICE HBT model for InP-based single HBTs Yang, Kyounghoon; GutierrezAitken, AL; Zhang, X; Batthacharya, P; Haddad, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.43, no.9, pp.1470 - 1472, 1996-09 |
| Analysis of InGaAs/InP Single-Photon Avalanche Diodes With the Multiplication Width Variation Lee, Ki Won; Yang, Kyounghoon, IEEE PHOTONICS TECHNOLOGY LETTERS, v.26, no.10, pp.999 - 1002, 2014-05 |
| Area-Efficient Series-Connected Resonant Tunneling Diode Pair as Binary Neuron in Cellular Neural Network Lee, Jongwon; Choi, Sunkyu; Kim, Seong-Yeon; Lee, Jooseok; Yang, Kyounghoon, IEEE ELECTRON DEVICE LETTERS, v.41, no.9, pp.1308 - 1311, 2020-09 |
| Automatic control of efficiency and linearity in power amplifiers for low-power wireless communications Yang, Kyounghoon; Jack R. East; George I. Haddad, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.0, no.0, pp.113 - 118, 1999-07 |
| BUILT-IN BIAXIAL STRAIN DEPENDENCE OF GAMMA-X TRANSPORT IN GAAS/INXAL1-XAS/GAAS PSEUDOMORPHIC HETEROJUNCTION BARRIERS (X=0, 0.03, AND 0.06) Yang, Kyounghoon; EAST, JR; HADDAD, GI; DRUMMOND, TJ; BRENNAN, TM; HAMMONS, BE, JOURNAL OF APPLIED PHYSICS, v.76, no.12, pp.7907 - 7914, 1994-12 |
| CML-type MOnostable BIstable logic element (MOBILE) using InP-based monolithic RTD/HBT technology Choi, S; Lee, B; Kim, T; Yang, Kyounghoon, ELECTRONICS LETTERS, v.40, no.13, pp.792 - 793, 2004-06 |
| Design, modeling, and characterization of monolithically integrated InP-based (1.55 mu m) high-speed (24Gb/s) p-i-nMBT front-end photoreceivers Yang, Kyounghoon; GutierrezAitken, AL; Zhang, XK; Haddad, GI; Bhattacharya, P, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.14, no.8, pp.1831 - 1839, 1996-08 |
| Effects of thermal stress on the performance of benzocyclobutene-passivated In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors Yoon, M; Kim, T; Kim, D; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, pp.1910 - 1913, 2004-04 |
| Fabrication of InP-based optoelectronic integrated circuit (OEIC) photoreceivers using shared layer integration of heterojunction bipolar transistors and refracting-facet photodiodes Lee, B; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.43, no.4B, pp.1956 - 1959, 2004-04 |
| Fabrication of submicron Y-gate InP metal semiconductor field effect transistors using crystallographically defined contact technology Yoon, M; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.42, no.4B, pp.2237 - 2240, 2003-04 |
| High dynamic-range CMOS image sensor cell based on self-adaptive photosensing operation Lee, S; Yang, Kyounghoon, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.53, no.7, pp.1733 - 1735, 2006-07 |
| High f(max) InP double heterojunction bipolar transistors with chirped InGaAs/InP superlattice base-collector junction grown by CBE Yang, Kyounghoon; Munns, GO; Haddad, I, IEEE ELECTRON DEVICE LETTERS, v.18, no.11, pp.553 - 555, 1997-11 |
| High speed monolithically integrated p-i-n/HBT photoreceivers Syao, KC; GutierrezAitken, AL; Yang, Kyounghoon; Zhang, XK; Haddad, GI; Bhattacharya, PK, IEICE TRANSACTIONS ON ELECTRONICS, v.E80C, no.5, pp.695 - 702, 1997-05 |
| High-efficiency class-A power amplifiers with a dual-bias-control scheme Yang, Kyounghoon; Haddad, GI; East, JR, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.8, pp.1426 - 1432, 1999-08 |
| InP-based MMIC components for an optical phase-locked loop Goetz, PG; Eisele, H; Yang, Kyounghoon; Syao, KC; Qasaimeh, O; Bhattacharya, P, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.7, pp.1241 - 1250, 1999-07 |
| InP-based monolithic RFPD/HBT photoreceivers integrated with on-chip InPV-grooves Lee, B; Yang, Kyounghoon, ELECTRONICS LETTERS, v.39, no.16, pp.1203 - 1204, 2003-08 |
| Investigation of adjacent channel crosstalk in multichannel monolithically integrated 1.55 mu m photoreceiver arrays Syao, KC; Yang, Kyounghoon; Zhang, XK; Lu, LH; Katehi, LPB; Bhattacharya, P, JOURNAL OF LIGHTWAVE TECHNOLOGY, v.15, no.10, pp.1888 - 1894, 1997-10 |
| Low crosstalk (<-40dB) in 1.55 mu m high speed OEIC photoreceiver arrays with novel on-chip shielding GutierrezAitken, AL; Bhattacharya, P; Syao, KC; Yang, Kyounghoon; Haddad, GI; Zhang, X, ELECTRONICS LETTERS, v.32, no.18, pp.1706 - 1708, 1996-08 |
| Monlithically intergrated single-and multiple-channel SiGe/Si PIN-HBT front-end photoreceivers Yang, Kyounghoon, IEEE PHOTON. TECHNOL. LETTERS, v.0, no.0, pp.0 - 0, 1998-01 |
| Monolithically integrated 16-channel 1.55 mu m pin/HBT photoreceiver array with 11.5 GHz bandwidth Syao, KC; Yang, Kyounghoon; Zhang, X; Haddad, GI; Bhattacharya, P, ELECTRONICS LETTERS, v.33, no.1, pp.82 - 83, 1997-01 |
| Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers Rieh, JS; Klotzkin, D; Qasaimeh, Q; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; et al, IEEE PHOTONICS TECHNOLOGY LETTERS, v.10, no.3, pp.415 - 417, 1998-03 |
| NUMERICAL MODELING OF ABRUPT HETEROJUNCTIONS USING A THERMIONIC-FIELD EMISSION BOUNDARY-CONDITION Yang, Kyounghoon; EAST, JR; HADDAD, GI, SOLID-STATE ELECTRONICS, v.36, no.3, pp.321 - 330, 1993-03 |
| NUMERICAL STUDY ON THE INJECTION PERFORMANCE OF ALGAAS GAAS ABRUPT EMITTER HETEROJUNCTION BIPOLAR-TRANSISTORS Yang, Kyounghoon; EAST, JR; HADDAD, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.41, no.2, pp.138 - 147, 1994-02 |
| Performance comparison of wet-etched and dry-etched Geiger-mode avalanche photodiodes using a single diffusion process Lee, Ki Won; Yang, Kyounghoon, PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.10, no.11, pp.1445 - 1447, 2013-11 |
| Performance modeling of resonant tunneling-based random-access memories Zhang, H; Mazumder, P; Ding, L; Yang, Kyounghoon, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.4, no.4, pp.472 - 480, 2005-07 |
| Performance of new self-aligned InP/InGaAs heterojunction bipolar transistors using crystallographically defined emitter contact technology Kim, M; Kim, T; Jeon, S; Yoon, M; Kwon, Young Se; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.2B, pp.1139 - 1142, 2002-02 |
| Power performance of InP-based single and double heterojunction bipolar transistors Sawdai, D; Yang, Kyounghoon; Hsu, SSH; Pavlidis, D; Haddad, GI, IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, v.47, no.8, pp.1449 - 1456, 1999-08 |
| Reflection-Type RTD Low-Power Amplifier With Deep Sub-mW DC Power Consumption Lee, Jongwon; Lee, Jooseok; Yang, Kyounghoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.551 - 553, 2014-08 |
| Resonant tunneling diode/HBT D-flip flop ICs using current mode logic-type monostable-bistable transition logic element with complementary outputs Kim, T; Lee, B; Choi, S; Yang, Kyounghoon, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, v.44, no.4B , pp.2743 - 2746, 2005-04 |
| RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes Lee, Jongwon; Yang, Kyounghoon, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.1, pp.61 - 63, 2017-01 |
| Ring oscillator using an RTD-HBT heterostructure Lin, CH; Yang, Kyounghoon; East, JR; Haddad, GI; Chow, DH; Warren, LD; Dunlap, HL; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.39, no.3, pp.572 - 575, 2001-09 |
| Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology Rieh, JS; Qasaimeh, O; Lu, LH; Yang, Kyounghoon; Katehi, LPB; Bhattacharya, P; Croke, ET, IEEE MICROWAVE AND GUIDED WAVE LETTERS, v.8, no.2, pp.63 - 65, 1998-02 |
| Sub-1-V supply self-adaptive CMOS image sensor cell with 86-dB dynamic range Lee, S; Yang, Kyounghoon, IEEE ELECTRON DEVICE LETTERS, v.28, no.6, pp.492 - 494, 2007-06 |
| THEORETICAL AND EXPERIMENTAL DC CHARACTERIZATION OF INGAAS-BASED ABRUPT EMITTER HBTS Yang, Kyounghoon; COWLES, JC; EAST, JR; HADDAD, GI, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.6, pp.1047 - 1058, 1995-06 |
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