20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology
A new CML-type monostable/bistable logic element IC is fabricated using inonolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs Heterojunction Bipolar Transistors (HBTs). The D flip-flop function of the fabricated circuit is confirmed up to 20 Gbps at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications.
- Publisher
- IOP PUBLISHING LTD
- Issue Date
- 2005
- Language
- English
- Article Type
- Article; Proceedings Paper
- Citation
COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212
- ISSN
- 0951-3248
- Appears in Collection
- EE-Journal Papers(저널논문)
- Files in This Item
- There are no files associated with this item.
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