20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Choi, S | ko |
| dc.contributor.author | Lee, B | ko |
| dc.contributor.author | Kim, T | ko |
| dc.contributor.author | Yang, Kyounghoon | ko |
| dc.date.accessioned | 2013-03-07T09:41:41Z | - |
| dc.date.available | 2013-03-07T09:41:41Z | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.created | 2012-02-06 | - |
| dc.date.issued | 2005 | - |
| dc.identifier.citation | COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES, v.184, pp.209 - 212 | - |
| dc.identifier.issn | 0951-3248 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/89895 | - |
| dc.description.abstract | A new CML-type monostable/bistable logic element IC is fabricated using inonolithically integrated resonant tunnelling diodes (RTDs) and InP/InGaAs Heterojunction Bipolar Transistors (HBTs). The D flip-flop function of the fabricated circuit is confirmed up to 20 Gbps at room temperature. This result indicates the potential of the RTD/HBT technology for high-speed logic applications. | - |
| dc.language | English | - |
| dc.publisher | IOP PUBLISHING LTD | - |
| dc.title | 20 Gbps operation of RTD/HBT MOBILE (MOnostable BIstable Logic Element) IC based on an InP technology | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000229928100044 | - |
| dc.identifier.scopusid | 2-s2.0-33644531263 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 184 | - |
| dc.citation.beginningpage | 209 | - |
| dc.citation.endingpage | 212 | - |
| dc.citation.publicationname | COMPOUND SEMICONDUCTORS 2004, PROCEEDINGS BOOK SERIES: INSTITUTE OF PHYSICS CONFERENCE SERIES | - |
| dc.contributor.localauthor | Yang, Kyounghoon | - |
| dc.contributor.nonIdAuthor | Choi, S | - |
| dc.contributor.nonIdAuthor | Lee, B | - |
| dc.contributor.nonIdAuthor | Kim, T | - |
| dc.type.journalArticle | Article; Proceedings Paper | - |
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