A Low Noise Planar-Type Avalanche Photodiode using a Single-Diffusion Process in Geiger-Mode Operation

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We report the performances of a planar-type Geiger-mode InGaAs/InP avalanche photodiode (APD) using a single-diffusion process based on a single wet recess-etching technique at a wavelength of 1.55 mu m. The recess-etched window region is found to have a smoothly etched sidewall with a large slope width of 0.9 mu m. The Geiger-mode characteristics have been measured at 240-280 K for a 20 mu m diameter device. The fabricated Geiger-mode APD shows a low dark count probability (DCP) per gate pulse of 2.8 x 10(-3), a high photon detection efficiency (PDE) of 17.4%, and a low noise equivalent power (NEP) of 1.74 x 10(-16) W/Hz(1/2) at 240 K. The results are the first demonstration of a planar-type single-diffused Geiger-mode APD using a single wet recess-etching. (C) 2013 The Japan Society of Applied Physics
Publisher
JAPAN SOC APPLIED PHYSICS
Issue Date
2013-07
Language
English
Article Type
Article
Keywords

QUANTUM KEY DISTRIBUTION; PHOTON-DETECTION; DIODE DETECTORS; GUARD RINGS; MULTIPLICATION; SUPPRESSION; PERFORMANCE; JUNCTION; DESIGN

Citation

JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.7

ISSN
0021-4922
DOI
10.7567/JJAP.52.072201
URI
http://hdl.handle.net/10203/175561
Appears in Collection
EE-Journal Papers(저널논문)
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