Analysis of InGaAs/InP Single-Photon Avalanche Diodes With the Multiplication Width Variation

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This letter investigates dependence of performances of single-diffused single-photon avalanche photodiodes (SPADs) using a wet recess-etching technique on a multiplication width. Three-types of single-diffused InGaAs/InP planar SPADs with the different multiplication width have been fabricated and analyzed, which have no diffusion depth variation between fabricated devices. The fabricated SPAD with the multiplication width of 1.3 mu m shows a low dark count rate (DCR) of 9 kHz with a photon detection efficiency of 17.1% at 240 K. It is found that the DCR is reduced by increasing the multiplication width.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-05
Language
English
Article Type
Article
Keywords

PHOTODIODES; PERFORMANCE; PROBABILITY; DESIGN

Citation

IEEE PHOTONICS TECHNOLOGY LETTERS, v.26, no.10, pp.999 - 1002

ISSN
1041-1135
DOI
10.1109/LPT.2014.2312022
URI
http://hdl.handle.net/10203/194195
Appears in Collection
EE-Journal Papers(저널논문)
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