Reflection-Type RTD Low-Power Amplifier With Deep Sub-mW DC Power Consumption

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This letter presents a resonant tunneling diode (RTD)-based microwave amplifier operating at deep sub-milliwatt level dc-power. The fabricated amplifier, which is based on a reflection-type amplifying topology and uses an InP monolithic microwave integrated circuit technology, shows extremely low dc-power consumption of 125 mu W with a gain of more than 10 dB at 5.7 GHz. The amplifier performance is mainly enabled by the favorable characteristics of the 0.9 - mu m InP-based RTDs biased at V-BIAS = 0.36V. The RTDs exhibit a high peak-to-valley current ratio (PVCR) of 11.2 with a low peak current (I-P) of 430 mu A and thereby a relatively low negative resistance magnitude of 480 Omega. The dc-power consumption is about 6.4 times lower than that in transistor-based low-power amplifiers reported to date for the 5 GHz frequency band.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2014-08
Language
English
Article Type
Article
Keywords

MMIC APPLICATIONS; HETEROSTRUCTURE; CIRCUITS; DIODE

Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.24, no.8, pp.551 - 553

ISSN
1531-1309
DOI
10.1109/LMWC.2014.2322751
URI
http://hdl.handle.net/10203/189845
Appears in Collection
EE-Journal Papers(저널논문)
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