Performance comparison of wet-etched and dry-etched Geiger-mode avalanche photodiodes using a single diffusion process

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In this paper, we compare the performances of wet-etched and dry-etched Geiger-mode avalanche photodiodes (GM-APDs) using a single diffusion process at a wavelength of 1.55-μm. The single-diffused GM-APD based on a wet recess-etching has demonstrated the good performances of a dark count rate of 0.03 kHz/μm and a photon detection efficiency of 17.1% at 240 K.
Publisher
WILEY-V C H VERLAG GMBH
Issue Date
2013-11
Language
English
Citation

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, v.10, no.11, pp.1445 - 1447

ISSN
1862-6300
DOI
10.1002/pssc.201300178
URI
http://hdl.handle.net/10203/189492
Appears in Collection
EE-Journal Papers(저널논문)
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