16-GHZ BANDWIDTH INALAS-INGAAS MONOLITHICALLY INTEGRATED P-I-N/HBT PHOTORECEIVER

Abstract

A monolithically integrated p-i-n transimpedance-amplifier photoreceiver based on an InAlAs-InGaAs HBT structure lattice-matched to InP has been designed, fabricated, and characterized, The p-i-n photodiode is implemented using the InGaAs base and collector layers of the I-IBT. A three-stage amplifier with a feedback resistance of 550 Ohm demonstrated a transimpedance gain of 46 dB Ohm and a bandwidth of 20 GHz, corresponding to a transimpedance-bandwidth product of 4 THz Ohm. The measured -3 dB bandwidth of the integrated photoreceiver is 16 GHz, which is the highest reported to date for an InAlAs-InGaAs p-i-n/HBT monolithically integrated photoreceiver and is sufficient for 20-Gb/s operation.