RF Power Analysis on 5.8 GHz Low-Power Amplifier Using Resonant Tunneling Diodes

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This letter reports the analysis of RF power characteristics in a microwave amplifier using resonant tunneling diodes (RTDs). The implemented IC shows a return loss of more than 11 dB with a low dc-power consumption of 0.42 mW and a power gain of 8.6 dB at 5.8 GHz. The maximum linear RF output power with a uniform gain of 8.6 dB is measured to be -25.4 dBm at the same frequency. The gain hump phenomenon is observed in an input power range from -32 dBm to -16 dBm, and is shown to arise from a sudden movement of the operating point from the negative differential resistance (NDR) region to the positive differential resistance (PDR) region, based on a large-signal load-line analysis together with a harmonic balance simulation.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-01
Language
English
Article Type
Article
Citation

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, v.27, no.1, pp.61 - 63

ISSN
1531-1309
DOI
10.1109/LMWC.2016.2629984
URI
http://hdl.handle.net/10203/222770
Appears in Collection
EE-Journal Papers(저널논문)
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