Browse by Subject MOSFETS
Showing results 1 to 60 of 62
| A biomolecular detection method based on charge pumping in a nanogap embedded field-effect-transistor biosensor Kim, Sung-Ho; Ahn, Jae-Hyuk; Park, Tae-Jung; Lee, Sang-Yup; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.94, no.24, 2009-06 |
| A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors Duarte, Juan Pablo; Kim, Moon-Seok; Choi, Sung-Jin; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.4, pp.1008 - 1012, 2012-04 |
| A Core Compact Model for Multiple-Gate Junctionless FETs Hur, Jae; Moon, Dong-Il; Choi, Ji-Min; Seol, Myeong-Lok; Jeong, Ui-Sik; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.7, pp.2285 - 2291, 2015-07 |
| A Generalized Threshold Voltage Model of Tied and Untied Double-Gate Junctionless FETs for a Symmetric and Asymmetric Structure Hur, Jae; Choi, Ji-Min; Woo, Jong-Ho; Jang, Hyunjae; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.62, no.9, pp.2710 - 2716, 2015-09 |
| A NEW EXPERIMENTAL-METHOD (E-PLOT) TO CHARACTERIZE THE SUBSTRATE-CURRENT AND THE SATURATION-VOLTAGE OF FRESH AND HOT-ELECTRON-DAMAGED NMOSFETS KIM, SH; MIN, KS; Lee, Kwyro, SOLID-STATE ELECTRONICS, v.37, no.1, pp.198 - 200, 1994-01 |
| A Novel Charge Pumping Technique With Gate-Induced Drain Leakage Current Lee, Geon-Beom; Kim, Jeong-Yeon; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.44, no.5, pp.709 - 712, 2023-05 |
| A Study of High-Temperature Effects on an Asymmetrically Doped Vertical Pillar-Type Field-Effect Transistor Han, Joon-Kyu; Hur, Jae; Kim, Wu-Kang; Park, Jun-Young; Lee, Seung-Wook; Kim, Seong-Yeon; Yu, Ji-Man; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.19, pp.52 - 55, 2020-01 |
| A Temperature-stabilized SOI Voltage Reference Based on Threshold Voltage Difference Between Enhancement and Depletion NMOSFET's H.J.Song; Kim, Choong Ki, IEEE JOURNAL OF SOLID-STATE CIRCUITS, v.28, no.6, pp.671 - 677, 1993-06 |
| A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction Lee, Jaehyun; Kim, Seungchul; Shin, Mincheol, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06 |
| A Vertically Integrated Junctionless Nanowire Transistor Lee, Byung-Hyun; Hur, Jae; Kang, Min-Ho; Bang, Tewook; Ahn, Dae-Chul; Lee, Dongil; Kim, Kwang-Hee; et al, NANO LETTERS, v.16, no.3, pp.1840 - 1847, 2016-03 |
| An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs Huh, In; Park, Sangchun; Shin, Mincheol; Choi, Woo Young, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3502 - 3507, 2017-08 |
| An Optically Assisted Program Method for Capacitorless 1T-DRAM Moon, Dong-Il; Choi, Sung-Jin; Han, Jin-Woo; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.7, pp.1714 - 1718, 2010-07 |
| Analysis and Evaluation of a BJT-Based 1T-DRAM Choi, Sung-Jin; Han, Jin-Woo; Moon, Dong-Il; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.393 - 395, 2010-05 |
| Ballistic quantum transport in nanoscale Schottky-barrier tunnel transistors Ahn, C; Shin, Mincheol, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.5, no.3, pp.278 - 283, 2006-05 |
| Dislocation effects in FinFETs for different III-V compound semiconductors Hur, Ji-Hyun; Jeon, Sanghun, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.49, no.15, 2016-04 |
| Effect of channel orientation in p-type nanowire Schottky barrier metal-oxide-semiconductor field-effect transistors Shin, Mincheol, APPLIED PHYSICS LETTERS, v.97, no.9, pp.092108, 2010-08 |
| EFFECTS OF F+ IMPLANTATION ON THE CHARACTERISTICS OF POLY-SI FILMS AND LOW-TEMPERATURE N-CH POLY-SI THIN-FILM TRANSISTORS PARK, JW; Ahn, Byung Tae; LEE, K, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.34, no.3, pp.1436 - 1441, 1995-03 |
| Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: A first-principles study Jung, Hyo Eun; Shin, Mincheol, NANOTECHNOLOGY, v.29, no.2, 2018-01 |
| Efficient simulation of silicon nanowire field effect transistors and their scaling behavior Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.101, no.2, pp.43 - 46, 2007-01 |
| Electrical and interfacial characterization of atomic layer deposited high-kappa gate dielectrics on GaAs for advanced CMOS devices Dalapati, Goutam Kumar; Tong, Yi; Loh, Wei-Yip; Mun, Hoe Keat; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, no.8, pp.1831 - 1837, 2007-08 |
| Electron mobility enhancement using ultrathin pure Ge on Si substrate Yeo, CC; Cho, Byung Jin; Gao, E; Lee, SJ; Lee, AH; Yu, CY; Liu, CW; et al, IEEE ELECTRON DEVICE LETTERS, v.26, no.10, pp.761 - 763, 2005-10 |
| Enhanced low dose rate effect of the radiation-sensitive field effect transistors developed by the National Microelectronics Research Centre Ko, Dai Hp; Kim, Sung-Joon; Min, KyoungWook; Park, J.; Ryu, Kwangsun, NUCLEAR INSTRUMENTS METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, v.584, no.2-3, pp.440 - 443, 2008-01 |
| Evolution of Unified-RAM: 1T-DRAM and BE-SONOS Built on a Highly Scaled Vertical Channel Moon, Dong-Il; Kim, Jee Yeon; Moon, Joon-Bae; Kim, Dong-Oh; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.61, no.1, pp.60 - 65, 2014-01 |
| Formation of Low-Resistivity Nickel Germanide Using Atomic Layer Deposited Nickel Thin Film Ahn, Hyunjun; Moon, Jungmin; Seo, Yujin; Lee, Tae In; Kim, Choong-Ki; Hwang, Wan Sik; Yu, Hyun-Yong; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.6, pp.2599 - 2603, 2017-06 |
| Full-quantum simulation of hole transport and band-to-band tunneling in nanowires using the k center dot p method Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.106, no.5, 2009-09 |
| Functionalized Bonding Materials and Interfaces for Heterogeneously Layer-Stacked Applications Kim, Sanghyeon; Han, Jae-Hoon; Choi, Won Jun; Song, Jin Dong; Kim, Hyung-jun, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.74, no.2, pp.82 - 87, 2019-01 |
| High performance platinum-silicided p-type Schottky barrier metal-oxide-semiconductor field-effect transistors scaled down to 30 nm Jun, Myungsim; Park, Youngsam; Hyun, Younghoon; Zyung, Taehyoung; Jang, Moongyu; Choi, Sung-Jin, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.29, no.3, 2011-05 |
| HIGH-QUALITY OXYNITRIDE GATE DIELECTRICS PREPARED BY REOXIDATION OF NH3-NITRIDED SIO2 IN N2O AMBIENT Yoon, Gi-Wan; Han, LK; Kim, GW; Yan, J; Kwong, DL, ELECTRONICS LETTERS, v.31, no.14, pp.1196 - 1198, 1995-07 |
| Hot carrier reliability study in body-tied fin-type field effect transistors Han, JW; Lee, CH; Park, D; Choi, Yang-Kyu, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.4B, pp.3101 - 3105, 2006-04 |
| Hot-carrier lifetime dependence on channel width and silicon recess depth in N-channel metal-oxide-semiconductor field-effect-transistors with the recessed local oxidation of silicon isolation structure Chim, WK; Cho, Byung Jin; Yue, JMP, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.41, no.1, pp.47 - 53, 2002-01 |
| Improved characteristics of MOS interface between In0.53Ga0.47As and insulator by H-2 annealing with Pt gate electrode Kim, Seong Kwang; Geum, Dae-Myeong; Lim, Hyeong-Rak; Kim, Hansung; Han, Jae-Hoon; Hwang, Do Kyung; Song, Jin Dong; et al, APPLIED PHYSICS LETTERS, v.115, no.14, 2019-09 |
| Improved SOI FinFETs Performance with Low-Temperature Deuterium Annealing Ku, Ja-Yun; Yu, Ji-Man; Wang, Dong-Hyun; Jung, Dae-Han; Han, Joon-Kyu; Choi, Yang-Kyu; Park, Jun-Young, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.70, no.7, pp.3958 - 3962, 2023-07 |
| Investigation of Size Dependence on Sensitivity for Nanowire FET Biosensors Ahn, Jae-Hyuk; Choi, Sung-Jin; Han, Jin-Woo; Park, Tae-Jung; Lee, Sang-Yup; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.10, no.6, pp.1405 - 1411, 2011-11 |
| Investigation of the source-side injection characteristic of a dopant-segregated Schottky barrier metal-oxide-semiconductor field-effect-transistor Kim, Sung-Ho; Choi, Sung-Jin; Jang, Moon-Gyu; Choi, Yang-Kyu, APPLIED PHYSICS LETTERS, v.95, no.6, 2009-08 |
| Leakage current limit of time domain reflectometry in ultrathin dielectric characterization Kim, Yonghun; Baek, Seung Heon; Jeon, Chang Hoon; Lee, Young Gon; Kim, Jin Ju; Jung, Ukjin; Kang, Soo Cheol; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.8, pp.37 - 41, 2014-08 |
| Low-Frequency Noise Characteristics in SONOS Flash Memory With Vertically Stacked Nanowire FETs Bang, Te-Wook; Lee, Byung-Hyun; Kim, Choong-Ki; Ahn, Dae-Chul; Jeon, Seung-Bae; Kang, Min-Ho; Oh, Jae-Sub; et al, IEEE ELECTRON DEVICE LETTERS, v.38, no.1, pp.40 - 43, 2017-01 |
| Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications Jeon, Sanghun; Kim, Sun Il; Park, Sungho; Song, Ihun; Park, Jaechul; Kim, Sangwook; Kim, Changjung, IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1128 - 1130, 2010-10 |
| Measurement of carrier generation lifetime in SOI devices Shin, Hyung-Cheol; Racanelli, M; Huang, WM; Foerstner, J; Hwang, T; Schroder, DK, SOLID-STATE ELECTRONICS, v.43, no.2, pp.349 - 353, 1999-02 |
| Multiwavelength Raman characterization of silicon stress near through-silicon vias and its inline monitoring applications Yoo, Woo Sik; Kim, Jae Hyun; Han, Seung Min J., JOURNAL OF MICRO-NANOLITHOGRAPHY MEMS AND MOEMS, v.13, no.1, 2014-02 |
| NEW ANALYTICAL POLYCRYSTALLINE-SILICON THIN-FILM TRANSISTOR MODEL FOR COMPUTER-AIDED-DESIGN AND PARAMETER EXTRACTION BYUN, YH; SHUR, M; HACK, M; Lee, Kwyro, SOLID-STATE ELECTRONICS, v.35, no.5, pp.655 - 663, 1992-05 |
| NEW APPROACH FOR MODELING OF CURRENT DEGRADATION IN HOT-ELECTRON DAMAGED LDD NMOSFETS YTTERDAL, T; KIM, SH; Lee, Kwyro; FJELDLY, TA, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.42, no.2, pp.362 - 365, 1995-02 |
| Parasitic S/D resistance effects on hot-carrier reliability in body-tied FinFETs Han, JW; Lee, CH; Park, D; Choi, Yang-Kyu, IEEE ELECTRON DEVICE LETTERS, v.27, no.6, pp.514 - 516, 2006-06 |
| Partially Depleted SOI NMOSFET's with Self-Aligned Polysilicon Gate Formed on the Recessed Channel Region Jong-Ho Lee; Hyung-Cheol Shin; Jong-June Kim; Choon-Bae Park; Young-June Park, IEEE ELECTRON DEVICE LETTERS, v.18, no.5, pp.184 - 186, 1997-05 |
| Possibility and design of resonant terahertz emitters based on nanoscale strained silicon plasma wave transistors with enhanced mobility Park, Jong Yul; Kim, Sung-Ho; Choi, Yang-Kyu; Hong, Songcheol; Lee, Sang-Gug; Kim, Kyung Rok, JAPANESE JOURNAL OF APPLIED PHYSICS, v.53, no.6, 2014-06 |
| Quantum simulation of coaxially gated CNTFETs by using an effective mass approach Ahn, C; Shin, Mincheol, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.50, no.6, pp.1887 - 1893, 2007-06 |
| RECRYSTALLIZATION OF LPCVD AMORPHOUS SI FILMS USING F+ IMPLANTATION PARK, JW; MOON, DG; Ahn, Byung Tae; Lim, Ho Bin; Lee, Kwyro, THIN SOLID FILMS, v.245, no.1-2, pp.228 - 233, 1994-06 |
| Reduction of Leakage Current at the Gate Edge of SDB SO1 NMOS Transistor Kang, Sung-Weon; Lyu, Jong-Son; Kang, Jin-Young; Kang, Sang-Won; Lee, Jin-Hyo, IEEE ELECTRON DEVICE LETTERS, v.16, no.6, pp.236 - 236, 1995-06 |
| Relation between the Enhanced Low-Dose-Rate Effects of Metal Oxide Semiconductors and the Vacant Oxide Trap Densities of SiO2 Ko, DH; Rhee, SW; Kim, SJ; Min, KyoungWook, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.2, pp.800 - 804, 2009-02 |
| Reply to Comments by Ortiz-Conde et al. Kim, Gun-Hee; Bae, Hagyoul; Hur, Jae; Kim, Choong-Ki; Lee, Geon-Bum; Bang, Tewook; Choi, Yang-Kyu, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.9, pp.4022 - 4024, 2018-09 |
| Significance of gate oxide thinning below 1.5 nm on 1/f noise behavior in n-channel metal-oxide-semiconductor field-effect transistors under electrical stress Mheen, B; Kim, M; Song, YJ; Hong, Songcheol, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, v.45, no.6A, pp.4943 - 4947, 2006-06 |
| Stability of N-Channel Polysilicon Thin-Film Transistors with ECR Plasma Thermal Gate Oxide j.y. lee; c.h. han; Kim, Choong Ki, IEEE ELECTRON DEVICE LETTERS, v.17, no.4, pp.169 - 171, 1996-04 |
| Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jin, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12 |
| Sub-Bandgap Photonic Capacitance-Voltage Method for Characterization of the Interface Traps in Low Temperature Poly-Silicon Thin-Film Transistors Hwang, Jun Seok; Bae, Hagyoul; Lee, Jungmin; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong, IEEE ELECTRON DEVICE LETTERS, v.36, no.4, pp.339 - 341, 2015-04 |
| Surface roughness scattering effects on the ballisticity of Schottky barrier nanowire field effect transistors Jung, Hyo Eun; Shin, Mincheol, JOURNAL OF APPLIED PHYSICS, v.118, no.19, pp.195703-1 - 195703-7, 2015-11 |
| THE EFFECTS OF X-RAY IRRADIATION-INDUCED DAMAGE ON RELIABILITY IN MOS STRUCTURES KIM, S; LEE, H; HAN, CH; Lee, Kwyro; CHOI, S; JEON, Y; DIFABRIZIO, E; et al, SOLID-STATE ELECTRONICS, v.38, no.1, pp.95 - 99, 1995-01 |
| The impact of active layer thickness on low-frequency noise characteristics in InZnO thin-film transistors with high mobility Choi, Hyun-Sik; Jeon, Sanghun; Kim, Hojung; Shin, Jaikwang; Kim, Changjung; Chung, U-In, APPLIED PHYSICS LETTERS, v.100, no.17, 2012-04 |
| The impact of semiconductor technology scaling on CMOS RF and digital circuits for wireless application Lee, Kwyro; Nam, I; Kwon, I; Gil, J; Han, K; Park, S; Seo, BL, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.52, pp.1415 - 1422, 2005-07 |
| Thermal stability study of Si cap/ultrathin Ge/Si and strained Si/Si1-xGex/Si nMOSFETs with HfO2 gate dielectric Yeo, CC; Cho, Byung Jin; Lee, MH; Liu, CW; Choi, KJ; Lee, TW, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.21, no.5, pp.665 - 669, 2006-05 |
| Three-dimensional quantum simulation of multigate nanowire field effect transistors Shin, Mincheol, MATHEMATICS AND COMPUTERS IN SIMULATION, v.79, no.4, pp.1060 - 1070, 2008-12 |
| Tunneling Effects in a Charge-Plasma Dopingless Transistor Hur, Jae; Moon, Dong-Il; Han, Jin-Woo; Kim, Gun-Hee; Jeon, Chang-Hoon; Choi, Yang-Kyu, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.16, no.2, pp.315 - 320, 2017-03 |
Discover
Type
Open Access
Date issued
- 30,917 2020 - 2024
- 100,009 2010 - 2019
- 75,681 2000 - 2009
- 44,727 1990 - 1999
- 14,360 1980 - 1989
- 62 1964 - 1969