Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications
In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant low-frequency noise mechanism in both devices. The use of a high-mobility bilayer oxide TFT with scaled gate length is still valid for reducing low-frequency noise.
- Issue Date
- 2010-10
- Language
- English
- Article Type
- Article
- Keywords
1/F NOISE; MOSFETS; SILICON; DENSITY
- Citation
IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1128 - 1130
- ISSN
- 0741-3106
- Appears in Collection
- EE-Journal Papers(저널논문)
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