Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Jeon, Sanghun | ko |
| dc.contributor.author | Kim, Sun Il | ko |
| dc.contributor.author | Park, Sungho | ko |
| dc.contributor.author | Song, Ihun | ko |
| dc.contributor.author | Park, Jaechul | ko |
| dc.contributor.author | Kim, Sangwook | ko |
| dc.contributor.author | Kim, Changjung | ko |
| dc.date.accessioned | 2018-03-21T02:56:52Z | - |
| dc.date.available | 2018-03-21T02:56:52Z | - |
| dc.date.created | 2018-03-07 | - |
| dc.date.created | 2018-03-07 | - |
| dc.date.issued | 2010-10 | - |
| dc.identifier.citation | IEEE ELECTRON DEVICE LETTERS, v.31, no.10, pp.1128 - 1130 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | http://hdl.handle.net/10203/240838 | - |
| dc.description.abstract | In this letter, we present a comparative study of the low-frequency noise behavior of single-layer InGaZnO and bilayer InZnO-InGaZnO thin-film transistors (TFTs). The normalized noise for the bilayer oxide TFT is three times lower than that for the single-layer oxide TFT, mainly due to the higher mobility of the thin interfacial InZnO layer. The carrier number fluctuation is the dominant low-frequency noise mechanism in both devices. The use of a high-mobility bilayer oxide TFT with scaled gate length is still valid for reducing low-frequency noise. | - |
| dc.language | English | - |
| dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
| dc.subject | 1/F NOISE | - |
| dc.subject | MOSFETS | - |
| dc.subject | SILICON | - |
| dc.subject | DENSITY | - |
| dc.title | Low-Frequency Noise Performance of a Bilayer InZnO-InGaZnO Thin-Film Transistor for Analog Device Applications | - |
| dc.type | Article | - |
| dc.identifier.wosid | 000283353900020 | - |
| dc.identifier.scopusid | 2-s2.0-77957552122 | - |
| dc.type.rims | ART | - |
| dc.citation.volume | 31 | - |
| dc.citation.issue | 10 | - |
| dc.citation.beginningpage | 1128 | - |
| dc.citation.endingpage | 1130 | - |
| dc.citation.publicationname | IEEE ELECTRON DEVICE LETTERS | - |
| dc.identifier.doi | 10.1109/LED.2010.2059694 | - |
| dc.contributor.localauthor | Jeon, Sanghun | - |
| dc.contributor.nonIdAuthor | Kim, Sun Il | - |
| dc.contributor.nonIdAuthor | Park, Sungho | - |
| dc.contributor.nonIdAuthor | Song, Ihun | - |
| dc.contributor.nonIdAuthor | Park, Jaechul | - |
| dc.contributor.nonIdAuthor | Kim, Sangwook | - |
| dc.contributor.nonIdAuthor | Kim, Changjung | - |
| dc.description.isOpenAccess | N | - |
| dc.type.journalArticle | Article | - |
| dc.subject.keywordAuthor | Analog device applications | - |
| dc.subject.keywordAuthor | bilayer oxide semiconductor | - |
| dc.subject.keywordAuthor | electron devices | - |
| dc.subject.keywordAuthor | noise performance | - |
| dc.subject.keywordAuthor | thin-film devices | - |
| dc.subject.keywordAuthor | thin-film transistor (TFT) | - |
| dc.subject.keywordPlus | 1/F NOISE | - |
| dc.subject.keywordPlus | MOSFETS | - |
| dc.subject.keywordPlus | SILICON | - |
| dc.subject.keywordPlus | DENSITY | - |
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