DSpace at KOASAS: Jeon, Sanghun Researcher page

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Jeon, Sanghun (전상훈)Email

부교수, School of Electrical Engineering(전기및전자공학부)

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NO	Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
1	Insertion of HfO2 Seed/Dielectric Layer to the Ferroelectric HZO Films for Heightened Remanent Polarization in MFM Capacitors Gaddam, Venkateswarlu; Das, Dipjyoti; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.745 - 750, 2020-02
2	Improved Ferroelectric Switching in Sputtered HfZrOx Device Enabled by High Pressure Annealing Woo, Jiyong; Goh, Youngin; Im, Solyee; et al, IEEE ELECTRON DEVICE LETTERS, v.41, no.2, pp.232 - 235, 2020-02
3	Broad spectral responsivity in highly photoconductive InZnO/MoS2 heterojunction phototransistor with ultrathin transparent metal electrode Das, Dipjyoti; Park, Junghak; Ahn, Minho; et al, NANOTECHNOLOGY, v.31, no.3, 2020-01
4	Demonstration of High Ferroelectricity (P-r similar to 29 mu C/cm(2)) in Zr Rich HfxZr1-xO2 Films Das, Dipjyoti; Gaddam, Venkateswarlu; Jeon, Sanghunresearcher, IEEE ELECTRON DEVICE LETTERS, v.41, no.1, pp.34 - 37, 2020-01
5	Evolution of crystallographic structure and ferroelectricity of Hf0.5Zr0.5O2 films with different deposition rate Kim, Taeho; An, Minho; Jeon, Sanghunresearcher, AIP ADVANCES, v.10, no.1, 2020-01
6	Improved optical performance of multi-layer MoS2 phototransistor with see-through metal electrode Park, Junghak; Das, Dipjyoti; Ahn, Minho; et al, NANO CONVERGENCE, v.6, no.1, 2019-12
7	Transparent and Flexible Mayan-Pyramid-based Pressure Sensor using Facile-Transferred Indium tin Oxide for Bimodal Sensor Applications Jung, Minhyun; Vishwanath, Sujaya Kumar; Kim, Jihoon; et al, SCIENTIFIC REPORTS, v.9, 2019-10
8	Flexible Multimodal Sensors for Electronic Skin: Principle, Materials, Device, Array Architecture, and Data Acquisition Method Jeon, Sanghunresearcher; Lim, Soo-Chul; Tran Quang Trung; et al, PROCEEDINGS OF THE IEEE, v.107, no.10, pp.2065 - 2083, 2019-10
9	Comprehensive study of high pressure annealing on the ferroelectric properties of Hf0.5Zr0.5O2 thin films Oh, Changyong; Tewari, Amit; Kim, Kyungkwan; et al, NANOTECHNOLOGY, v.30, no.50, 2019-10
10	Influence of High-Pressure Annealing on Memory Properties of Hf0.5Zr0.5O2 Based 1T-FeRAM Yoon, Jae Seok; Tewari, Amit; Shin, Changhwan; et al, IEEE ELECTRON DEVICE LETTERS, v.40, no.7, pp.1076 - 1079, 2019-07
11	Robust and scalable three-dimensional spacer textile pressure sensor for human motion detection Kim, Kyungkwan; Jung, Minhyun; Jeon, Sanghunresearcher; et al, SMART MATERIALS AND STRUCTURES, v.28, no.6, 2019-06
12	Amorphous FeZr metal for multi-functional sensor in electronic skin Jung, Minhyun; Lee, Eunha; Kim, Dongseuk; et al, NPG Flexible Electronics, v.3, 2019-04
13	Scalable and facile synthesis of stretchable thermoelectric fabric for wearable self-powered temperature sensors Jung, Minhyun; Jeon, Sanghunresearcher; Bae, Jihyun, RSC ADVANCES, v.8, no.70, pp.39992 - 39999, 2018-12
14	First-order reversal curve diagrams for characterizing ferroelectricity of Hf0.5Zr0.5O2 films grown at different rates Goh, Youngin; Jeon, Sanghunresearcher, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.36, no.5, 2018-09
15	Effect of dysprosium and lutetium metal buffer layers on the resistive switching characteristics of Cu-Sn alloy-based conductive-bridge random access memory Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.38, 2018-09
16	The effect of the bottom electrode on ferroelectric tunnel junctions based on CMOS-compatible HfO2 Goh, Youngin; Jeon, Sanghunresearcher, NANOTECHNOLOGY, v.29, no.33, 2018-08
17	Discharge Current Analysis Estimating the Defect Sites in Amorphous Hafnia Thin-Film Transistor Goh, Youngin; Jeon, Sanghunresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.65, no.8, pp.3264 - 3268, 2018-08
18	Resistive switching characteristics of a modified active electrode and Ti buffer layer in Cu-Se-based atomic switch Woo, Hyunsuk; Vishwanath, Sujaya Kumar; Jeon, Sanghunresearcher, JOURNAL OF ALLOYS AND COMPOUNDS, v.753, pp.551 - 557, 2018-07
19	Enhanced tunneling electroresistance effects in HfZrO-based ferroelectric tunnel junctions by high-pressure nitrogen annealing Goh, Youngin; Jeon, Sanghunresearcher, APPLIED PHYSICS LETTERS, v.113, no.5, 2018-07
20	Non-volatile resistive switching in CuBi-based conductive bridge random access memory device Vishwanath, Sujaya Kumar; Woo, Hyunsuk; Jeon, Sanghunresearcher, APPLIED PHYSICS LETTERS, v.112, no.25, 2018-06

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