An Optically Assisted Program Method for Capacitorless 1T-DRAM

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This work is aimed at a novel program method that is assisted by light for capacitorless 1T-DRAM based on parasitic bipolar junction transistor operation. Experimental results clearly show that a flash of light triggers a distinctive binary memory state in the capacitorless 1T-DRAM. During the operation of the 1T-DRAM, the gate voltage is sustained at a negative, constant value. The sensing margin is 54 mu A and the hold state corresponding to the data retention time is retained over a few seconds. The proposed program method can therefore be considered as a promising candidate for future DRAM applications based on an optical interconnection system.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2010-07
Language
English
Article Type
Article
Keywords

UNIFIED-RAM URAM; GATE; TRANSISTOR; MOSFETS; SYSTEMS; POWER; CELL

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.57, no.7, pp.1714 - 1718

ISSN
0018-9383
DOI
10.1109/TED.2010.2047911
URI
http://hdl.handle.net/10203/94920
Appears in Collection
EE-Journal Papers(저널논문)
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