Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: A first-principles study

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First-principles density functional theory (DFT) based device simulations are performed for Si ultra-thin-body (UTB) field effect transistors with the explicit SiO2 atoms in the gate dielectric. In order to evaluate the Si/SiO2 interface stress effects on the UTB device performance, the interface stress tensor is extracted from the Si/SiO2 atomic structure by DFT calculations. The influence of the interface stress on the transport properties is examined through full quantum mechanical non-equilibrium Green's function calculations. Based on the analysis of the band structure and transfer characteristics, we demonstrate that the interface stress can characterize the overall effects of the SiO2 gate dielectric on the device performance in the nanoscale regime.
Publisher
IOP PUBLISHING LTD
Issue Date
2018-01
Language
English
Article Type
Article
Keywords

ELECTRONIC-STRUCTURE; SURFACE STRESS; SILICON; MOSFETS

Citation

NANOTECHNOLOGY, v.29, no.2

ISSN
0957-4484
DOI
10.1088/1361-6528/aa9a69
URI
http://hdl.handle.net/10203/237671
Appears in Collection
EE-Journal Papers(저널논문)
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