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Shin, Mincheol (신민철)
교수, School of Electrical Engineering(전기및전자공학부)

http://cnl.kaist.ac.kr

Research Area
Semiconductor Device/Circuit, Semiconductor Materials, Computational Nanotechnology, Nano Device Simulation
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    NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
    1
    Assessing the Performance of Novel Two-Dimensional Materials Transistors: First-Principles Based Approach

    Kim, Bokyeom; Seo, Junbeom; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.67, no.2, pp.463 - 468, 2020-02

    2
    Efficient Atomistic Simulation of Heterostucture Field-Effect Transistors

    Ahn, Yongsoo; Shin, Mincheolresearcher, IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, v.7, no.1, pp.668 - 676, 2019-08

    3
    Efficient Atomistic Simulation of Heterostructure Field-Effect Transistors

    Shin, Mincheolresearcher; Ahn, Yongsoo, IEEE Journal of the Electron Devices Society, v.7, pp.668 - 676, 2019-07

    4
    Performance limitations of nanowire resonant-tunneling transistors with steep switching analyzed by Wigner transport simulation

    Lee, Joon-Ho; Shin, Mincheolresearcher; Seo, Jeong Hyeon, JOURNAL OF APPLIED PHYSICS, v.125, no.17, 2019-05

    5
    Serially Connected Spin Torque Nano-Oscillators Integrated Directly on a Metal-Oxide-Semiconductor Field-Effect Transistor

    Kang, Doo Hyung; Jeong, Woo Jin; Lee, Jaehyun; et al, IEEE TRANSACTIONS ON MAGNETICS, v.55, no.4, 2019-04

    6
    Simulation of Strain-Assisted Switching in Synthetic Antiferromagnetic Free Layer-Based Magnetic Tunnel Junction

    Noh, Seongcheol; Kang, Doo Hyung; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON MAGNETICS, v.55, no.4, 2019-04

    7
    Phase difference dependence of output power in synchronized stacked spin Hall nano-oscillators

    Kang, Du-Hyung; Shin, Mincheolresearcher, JOURNAL OF PHYSICS-CONDENSED MATTER, v.30, no.28, pp.284001, 2018-06

    8
    Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells

    Lee, Joon-Ho; Shin, Mincheolresearcher; Byun, Seok-Joo; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.72, no.5, pp.622 - 627, 2018-03

    9
    Wigner transport simulation of (core gate) silicon-shell nanowire transistors in cylindrical coordinates

    Lee, Joon-Ho; Jeong, Woo Jin; Seo, Junbeom; et al, SOLID-STATE ELECTRONICS, v.139, pp.101 - 108, 2018-01

    10
    Effects of Si/SiO2 interface stress on the performance of ultra-thin-body field effect transistors: A first-principles study

    Jung, Hyo Eun; Shin, Mincheolresearcher, NANOTECHNOLOGY, v.29, no.2, 2018-01

    11
    Spin torque nano-oscillators directly integrated on a MOSFET

    Kang, Doo Hyung; Lee, Jaehyun; Jeong, Woo Jin; et al, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.17, no.1, pp.122 - 127, 2018-01

    12
    Schottky Tunneling Effects in a Tunnel FET

    Hur, Jae; Jeong, Woo Jin; Shin, Mincheolresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.12, pp.5223 - 5229, 2017-12

    13
    Thermal Conductivity and Thermal Boundary Resistances of ALD Al2O3 Films on Si and Sapphire

    Lee, Seung-Min; Choi, Won Chul; Kim, Junsoo; et al, INTERNATIONAL JOURNAL OF THERMOPHYSICS, v.38, no.176, 2017-12

    14
    Novel Operation of a Multi-Bit SOT Memory Cell Addressed With a Single Write Line

    Baek, Seung-heon Chris; Oh, Young Wan; Park, Byong-Gukresearcher; et al, IEEE TRANSACTIONS ON MAGNETICS, v.53, no.11, 2017-11

    15
    Quantum transport simulation of nanowire resonant tunneling diodes based on a Wigner function model with spatially dependent effective masses

    Lee, Joon-Ho; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON NANOTECHNOLOGY, v.16, no.6, pp.1028 - 1036, 2017-11

    16
    The Performance of Uniaxially Strained Phosphorene Tunneling Field-Effect Transistors

    Seo, Junbeom; Jung, Sungwoo; Shin, Mincheolresearcher, IEEE ELECTRON DEVICE LETTERS, v.38, no.8, pp.1150 - 1152, 2017-08

    17
    An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs

    Huh, In; Park, Sangchun; Shin, Mincheolresearcher; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3502 - 3507, 2017-08

    18
    A theoretical model for predicting Schottky-barrier height of the nanostructured silicide-silicon junction

    Lee, Jaehyun; Kim, Seungchul; Shin, Mincheolresearcher, APPLIED PHYSICS LETTERS, v.110, no.23, 2017-06

    19
    First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

    Ahn, Yongsoo; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.5, pp.2129 - 2134, 2017-05

    20
    Analysis of Drain-Induced Barrier Rising in Short-Channel Negative-Capacitance FETs and Its Applications

    Seo, Junbeom; Lee, Jaehyun; Shin, Mincheolresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.4, pp.1793 - 1798, 2017-04
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