A Compact Model of Quantum Electron Density at the Subthreshold Region for Double-Gate Junctionless Transistors

Cited 53 time in webofscience Cited 0 time in scopus
  • Hit : 268
  • Download : 0
A compact model of quantum electron density at the subthreshold region is derived for junctionless (JL) double-gate (DG) FETs. The proposed quantum model is obtained under two different quantum confinement conditions. One is for a case of a thick channel and a heavily doped channel, where quantum confinement effects (QCEs) are modeled by a 1-D quantum harmonic oscillator. The other is for a case of a thin channel, where QCEs are modeled by the use of a 1-D quantum well surrounded by high potential barriers and an energy correction term coming from the depletion charge. It is shown that, regardless of the channel thickness, the quantum confinement is higher in JL than in inversion-mode (IM) DG FETs. However, for a thin channel, the quantum threshold voltage shift is less severe in JL than in IM DG FETs. The proposed model gives an analytical expression for the threshold voltage shift due to QCEs, which can be used as a quantum correction term for compact modeling.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2012-04
Language
English
Article Type
Article
Keywords

THRESHOLD VOLTAGE; MOSFETS

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.59, no.4, pp.1008 - 1012

ISSN
0018-9383
DOI
10.1109/TED.2012.2185827
URI
http://hdl.handle.net/10203/101624
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡ Click to see webofscience_button
⊙ Cited 53 items in WoS Click to see citing articles in records_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0