An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs

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A drain current model of 2-D monolayer (ML) transition-metal dichalcogenide (TMD) tunnel FETs (TFETs) is proposed. For better accuracy, the proposed model features the following two points: 1) the accurate lateral energy profiles considering the extension of the depletion width (W-d) owing to the reduced dimensionality and 2) the spin- and valley-dependent complex band structure considering the spin- orbit coupling effect. The proposed model is validated by the tight-binding nonequilibrium green function simulation, in the case of ML MoS2 doublegate TFETs. By using the proposed model, the design guideline of ML TMD TFETs is presented.
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Issue Date
2017-08
Language
English
Article Type
Article
Keywords

FIELD-EFFECT TRANSISTORS; MOSFETS; LENGTH; SCALE; NM

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3502 - 3507

ISSN
0018-9383
DOI
10.1109/TED.2017.2716339
URI
http://hdl.handle.net/10203/225597
Appears in Collection
EE-Journal Papers(저널논문)
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