DC Field | Value | Language |
---|---|---|
dc.contributor.author | Huh, In | ko |
dc.contributor.author | Park, Sangchun | ko |
dc.contributor.author | Shin, Mincheol | ko |
dc.contributor.author | Choi, Woo Young | ko |
dc.date.accessioned | 2017-08-31T08:59:41Z | - |
dc.date.available | 2017-08-31T08:59:41Z | - |
dc.date.created | 2017-08-28 | - |
dc.date.created | 2017-08-28 | - |
dc.date.created | 2017-08-28 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | IEEE TRANSACTIONS ON ELECTRON DEVICES, v.64, no.8, pp.3502 - 3507 | - |
dc.identifier.issn | 0018-9383 | - |
dc.identifier.uri | http://hdl.handle.net/10203/225597 | - |
dc.description.abstract | A drain current model of 2-D monolayer (ML) transition-metal dichalcogenide (TMD) tunnel FETs (TFETs) is proposed. For better accuracy, the proposed model features the following two points: 1) the accurate lateral energy profiles considering the extension of the depletion width (W-d) owing to the reduced dimensionality and 2) the spin- and valley-dependent complex band structure considering the spin- orbit coupling effect. The proposed model is validated by the tight-binding nonequilibrium green function simulation, in the case of ML MoS2 doublegate TFETs. By using the proposed model, the design guideline of ML TMD TFETs is presented. | - |
dc.language | English | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.subject | FIELD-EFFECT TRANSISTORS | - |
dc.subject | MOSFETS | - |
dc.subject | LENGTH | - |
dc.subject | SCALE | - |
dc.subject | NM | - |
dc.title | An Accurate Drain Current Model of Monolayer Transition-Metal Dichalcogenide Tunnel FETs | - |
dc.type | Article | - |
dc.identifier.wosid | 000406268900068 | - |
dc.identifier.scopusid | 2-s2.0-85023770826 | - |
dc.type.rims | ART | - |
dc.citation.volume | 64 | - |
dc.citation.issue | 8 | - |
dc.citation.beginningpage | 3502 | - |
dc.citation.endingpage | 3507 | - |
dc.citation.publicationname | IEEE TRANSACTIONS ON ELECTRON DEVICES | - |
dc.identifier.doi | 10.1109/TED.2017.2716339 | - |
dc.contributor.localauthor | Shin, Mincheol | - |
dc.contributor.nonIdAuthor | Huh, In | - |
dc.contributor.nonIdAuthor | Park, Sangchun | - |
dc.contributor.nonIdAuthor | Choi, Woo Young | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordAuthor | Drain current modeling | - |
dc.subject.keywordAuthor | transition-metal dichalcogenide (TMD) | - |
dc.subject.keywordAuthor | tunnel field-effect transistors (TFETs) | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MOSFETS | - |
dc.subject.keywordPlus | LENGTH | - |
dc.subject.keywordPlus | SCALE | - |
dc.subject.keywordPlus | NM | - |
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