Browse "School of Electrical Engineering(전기및전자공학부)" by Subject CARBON

Showing results 1 to 14 of 14

1
Effect of hydrogen dilution on carrier transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys

Myong, SY; Lim, Koeng Suresearcher; Konagai, M, APPLIED PHYSICS LETTERS, v.88, pp.228 - 236, 2006-03

2
Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

Jang, Weon-Wi; Lee, Jeong-Oen; Yoon, Jun-Boresearcher; Kim, Min-Sang; Lee, Ji-Myoung; Kim, Sung-Min; Cho, Keun-Hwi; et al, APPLIED PHYSICS LETTERS, v.92, no.10, 2008-03

3
Facile graphene n-doping by wet chemical treatment for electronic applications

Bong, Jae Hoon; Sul, One Jae; Yoon, Alexander; Choi, Sung-Yoolresearcher; Cho, Byung Jinresearcher, NANOSCALE, v.6, no.15, pp.8503 - 8508, 2014-08

4
Free-Standing Graphene Thermophone on a Polymer-Mesh Substrate

Kim, Choong Sun; Hong, Seul Ki; Lee, Jung Min; Kang, Dong Soo; Cho, Byung-Jinresearcher; Choi, Jung Wooresearcher, SMALL, v.12, no.2, pp.185 - 189, 2016-01

5
Friction and conductance imaging of sp(2)- and sp(3)-hybridized subdomains on single-layer graphene oxide

Lee, Hyunsoo; Son, Narae; Jeong, Hu Young; Kim, Tae Gun; Bang, Gyeong Sook; Kim, Jong Yun; Shim, Gi Woong; et al, NANOSCALE, v.8, no.7, pp.4063 - 4069, 2016-01

6
Healing Graphene Defects Using Selective Electrochemical Deposition: Toward Flexible and Stretchable Devices

Yoon, Taeshik; Kim, Jae Han; Choi, Jun Hyung; Jung, Dae Yool; Park, Ick Joon; Choi, Sung Yoolresearcher; Cho, Nam Sung; et al, ACS NANO, v.10, no.1, pp.1539 - 1545, 2016-01

7
Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits

Hong, Seul Ki; Kim, Choong Sun; Hwang, Wan Sik; Cho, Byung-Jinresearcher, ACS NANO, v.10, no.7, pp.7142 - 7146, 2016-07

8
Laser-Induced Solid-Phase Doped Graphene

Choi, Insung; Jeong, Hu Young; Jung, Dae Yool; Byun, Myunghwan; Choi, Choon-Gi; Hong, Byung Hee; Choi, Sung-Yoolresearcher; et al, ACS NANO, v.8, no.8, pp.7671 - 7677, 2014-08

9
NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

Jang, WW; Yoon, Jun-Boresearcher; Kim, MS; Lee, JM; Kim, SM; Yoon, EJ; Cho, KH; et al, SOLID-STATE ELECTRONICS, v.52, no.10, pp.1578 - 1583, 2008-10

10
Realization of high performance flexible wire supercapacitors based on 3-dimensional NiCo2O4/Ni fibers

Ramadoss, Ananthakumar; Kang, Kyeong-Nam; Ahn, Hyo-Jin; Kim, Sun-I; Ryu, Seung-Takresearcher; Jang, Ji-Hyun, JOURNAL OF MATERIALS CHEMISTRY A, v.4, no.13, pp.4718 - 4727, 2016-04

11
Reduction intermediates of graphene oxide for low temperature reduction electrode material

Il Ahn, Sung; Kim, Kuk Joo; Kim, Jun Young; Kim, Eun Se; Han, Ji Ye; Eom, Ji Won; Choi, Kyeong-Keun; et al, RSC ADVANCES, v.4, no.43, pp.22476 - 22480, 2014-05

12
Reduction of graphene oxide film with poly (vinyl alcohol)

Il Ahn, Sung; Kim, Kuk-Joo; Jung, Ju Ra; Kang, Keong Yeon; Lee, Seon Min; Han, Ji Ye; Choi, Kyung-Cheolresearcher, CHEMICAL PHYSICS LETTERS, v.625, pp.36 - 40, 2015-04

13
Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

Loh, WY; Zang, H; Oh, HJ; Choi, KJ; Nguyen, HS; Lo, GQ; Cho, Byung Jinresearcher, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298, 2007-12

14
Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells

Lee, CH; Jeon, JW; Lim, Koeng Suresearcher, JOURNAL OF APPLIED PHYSICS, v.87, no.12, pp.8778 - 8785, 2000-06

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