Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells

The properties of thin p-type microcrystalline silicon (p-mu c-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) have been investigated. At the initial growth regime (< 100 Angstrom) of the p-mu c-Si:H onto p-a-SiC:H, Si nanocrystallites were proved to be formed in amorphous matrix. The thin p-mu c-Si:H was introduced as a novel constant band gap buffer at the p/i interface of amorphous silicon solar cells. The open circuit voltage and the blue response of the cell were improved significantly by inserting the p-mu c-Si:H at the p/i interface as a buffer when compared with those of the bufferless cell. Our numerical modeling on the constant band gap buffer elucidates clearly that the buffering effects of the thin p-mu c-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface. (C) 2000 American Institute of Physics. [S0021-8979(00)03912-8].
Publisher
AMER INST PHYSICS
Issue Date
2000-06
Language
ENG
Keywords

PHOTOCHEMICAL VAPOR-DEPOSITION; SIMULATION; SURFACE; CARBON; MODEL; FILMS; LAYER

Citation

JOURNAL OF APPLIED PHYSICS, v.87, no.12, pp.8778 - 8785

ISSN
0021-8979
URI
http://hdl.handle.net/10203/752
Appears in Collection
EE-Journal Papers(저널논문)
Files in This Item
Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC_H_i-a-Si_H interface of amorphous silicon solar cells.pdf(150.64 kB)Download
  • Hit : 685
  • Download : 561
  • Cited 0 times in thomson ci
This item is cited by other documents in WoS
⊙ Detail Information in WoSⓡClick to seewebofscience_button
⊙ Cited 16 items in WoSClick to see citing articles inrecords_button

qr_code

  • mendeley

    citeulike


rss_1.0 rss_2.0 atom_1.0