Ultrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells

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dc.contributor.authorLee, CHko
dc.contributor.authorJeon, JWko
dc.contributor.authorLim, Koeng Suko
dc.date.accessioned2007-07-02T06:07:33Z-
dc.date.available2007-07-02T06:07:33Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2000-06-
dc.identifier.citationJOURNAL OF APPLIED PHYSICS, v.87, no.12, pp.8778 - 8785-
dc.identifier.issn0021-8979-
dc.identifier.urihttp://hdl.handle.net/10203/752-
dc.description.abstractThe properties of thin p-type microcrystalline silicon (p-mu c-Si:H) films prepared onto boron-doped amorphous silicon carbide (p-a-SiC:H) have been investigated. At the initial growth regime (< 100 Angstrom) of the p-mu c-Si:H onto p-a-SiC:H, Si nanocrystallites were proved to be formed in amorphous matrix. The thin p-mu c-Si:H was introduced as a novel constant band gap buffer at the p/i interface of amorphous silicon solar cells. The open circuit voltage and the blue response of the cell were improved significantly by inserting the p-mu c-Si:H at the p/i interface as a buffer when compared with those of the bufferless cell. Our numerical modeling on the constant band gap buffer elucidates clearly that the buffering effects of the thin p-mu c-Si:H originate from the shrinkage of highly defective region with a short lifetime in the vicinity of the p/i interface. (C) 2000 American Institute of Physics. [S0021-8979(00)03912-8].-
dc.languageEnglish-
dc.language.isoen_USen
dc.publisherAMER INST PHYSICS-
dc.subjectPHOTOCHEMICAL VAPOR-DEPOSITION-
dc.subjectSIMULATION-
dc.subjectSURFACE-
dc.subjectCARBON-
dc.subjectMODEL-
dc.subjectFILMS-
dc.subjectLAYER-
dc.titleUltrathin boron-doped microcrystalline silicon as a novel constant band gap buffer inserted at the p-a-SiC : H/i-a-Si : H interface of amorphous silicon solar cells-
dc.typeArticle-
dc.identifier.wosid000087346400079-
dc.identifier.scopusid2-s2.0-0012520529-
dc.type.rimsART-
dc.citation.volume87-
dc.citation.issue12-
dc.citation.beginningpage8778-
dc.citation.endingpage8785-
dc.citation.publicationnameJOURNAL OF APPLIED PHYSICS-
dc.embargo.liftdate9999-12-31-
dc.embargo.terms9999-12-31-
dc.contributor.localauthorLim, Koeng Su-
dc.contributor.nonIdAuthorLee, CH-
dc.contributor.nonIdAuthorJeon, JW-
dc.type.journalArticleArticle-
dc.subject.keywordPlusPHOTOCHEMICAL VAPOR-DEPOSITION-
dc.subject.keywordPlusSIMULATION-
dc.subject.keywordPlusSURFACE-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusMODEL-
dc.subject.keywordPlusFILMS-
dc.subject.keywordPlusLAYER-
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