Fabrication and characterization of a nanoelectromechanical switch with 15-nm-thick suspension air gap

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We developed titanium nitride (TiN) based nanoelectromechanical (NEM) switch with the smallest suspension air-gap thickness ever made to date by a "top-down" complementary metal-oxide semiconductor fabrication methods. Cantilever-type NEM switch with a 15-nm-thick suspension air gap and a 35-nm-thick TiN beam was successfully fabricated and characterized. The fabricated cantilever-type NEM switch showed an essentially zero off current, an abrupt switching with less than 3 mV/decade, and an on/off current ratio exceeding 10(5) in air ambient. Also achieved was an endurance of over several hundreds of switching cycles under dc and ac biases in air ambient. (C) 2008 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2008-03
Language
English
Article Type
Article
Keywords

CARBON; NANORELAY; DEVICE; LIMITS; MEMORY

Citation

APPLIED PHYSICS LETTERS, v.92, no.10

ISSN
0003-6951
DOI
10.1063/1.2892659
URI
http://hdl.handle.net/10203/88410
Appears in Collection
EE-Journal Papers(저널논문)
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