Effect of hydrogen dilution on carrier transport in hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloys

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The effect of the hydrogen dilution ratio on characteristics of hydrogenated boron-doped nanocrystalline silicon-silicon carbide alloy (p-nc-Si-SiC:H) films is investigated. Hydrogen coverage near the growing surface causes nanocrystallization by retarding the reactions of the precursors. It was found that p-nc-Si-SiC:H alloys have two different kinds of carrier transport mechanisms: one is the thermally activated hopping conduction between neighboring crystallites near room temperature and the other is the band tail hopping conduction below 150 K. However, the film at the onset of the nanocrystalline growth exhibits a different behavior due to a large band tail disorder. (c) 2006 American Institute of Physics.
Publisher
AMER INST PHYSICS
Issue Date
2006-03
Language
English
Article Type
Article
Keywords

PHOTO-CVD TECHNIQUE; P-LAYER STRUCTURE; SIC-H FILMS; SOLAR-CELLS; MECHANISM; CARBON

Citation

APPLIED PHYSICS LETTERS, v.88, pp.228 - 236

ISSN
0003-6951
DOI
10.1063/1.2177641
URI
http://hdl.handle.net/10203/750
Appears in Collection
EE-Journal Papers(저널논문)
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