Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance
We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-kappa dielectrics on Si/Si1-xGex with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-xGex channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.
- Publisher
- IEEE
- Issue Date
- 2007-12
- Language
- English
- Article Type
- Article
- Keywords
THERMAL-STABILITY; SILICON; CARBON; HETEROSTRUCTURES; DEPENDENCE; INVERSION; INTERFACE; MOSFETS; BORON
- Citation
IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298
- ISSN
- 0018-9383
- Appears in Collection
- EE-Journal Papers(저널논문)
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