Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

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We report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-kappa dielectrics on Si/Si1-xGex with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-xGex channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.
Publisher
IEEE
Issue Date
2007-12
Language
English
Article Type
Article
Keywords

THERMAL-STABILITY; SILICON; CARBON; HETEROSTRUCTURES; DEPENDENCE; INVERSION; INTERFACE; MOSFETS; BORON

Citation

IEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298

ISSN
0018-9383
DOI
10.1109/TED.2007.908599
URI
http://hdl.handle.net/10203/88552
Appears in Collection
EE-Journal Papers(저널논문)
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