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Strained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance

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dc.contributor.authorLoh, WYko
dc.contributor.authorZang, Hko
dc.contributor.authorOh, HJko
dc.contributor.authorChoi, KJko
dc.contributor.authorNguyen, HSko
dc.contributor.authorLo, GQko
dc.contributor.authorCho, Byung Jinko
dc.date.accessioned2013-03-06T21:37:16Z-
dc.date.available2013-03-06T21:37:16Z-
dc.date.created2012-02-06-
dc.date.created2012-02-06-
dc.date.issued2007-12-
dc.identifier.citationIEEE TRANSACTIONS ON ELECTRON DEVICES, v.54, pp.3292 - 3298-
dc.identifier.issn0018-9383-
dc.identifier.urihttp://hdl.handle.net/10203/88552-
dc.description.abstractWe report a novel Si/Si1-xGex channel with improved noise, current drivability, and reliability using a buried Si0.99C0.01, which can induce higher channel strain for the same Ge concentration. High-kappa dielectrics on Si/Si1-xGex with buried Si0.99C0.01 show lower charge trapping, better leakage current distribution and less flatband voltage shift. Si/Si1-xGex channel p-MOSFET with the buried Si0.99C0.01 shows drive current improvement of up to 20% and better noise immunity.-
dc.languageEnglish-
dc.publisherIEEE-
dc.subjectTHERMAL-STABILITY-
dc.subjectSILICON-
dc.subjectCARBON-
dc.subjectHETEROSTRUCTURES-
dc.subjectDEPENDENCE-
dc.subjectINVERSION-
dc.subjectINTERFACE-
dc.subjectMOSFETS-
dc.subjectBORON-
dc.titleStrained Si/SiGe channel with buried Si0.99C0.01 for improved drivability, gate stack integrity and noise performance-
dc.typeArticle-
dc.identifier.wosid000251268300020-
dc.identifier.scopusid2-s2.0-37049011024-
dc.type.rimsART-
dc.citation.volume54-
dc.citation.beginningpage3292-
dc.citation.endingpage3298-
dc.citation.publicationnameIEEE TRANSACTIONS ON ELECTRON DEVICES-
dc.identifier.doi10.1109/TED.2007.908599-
dc.contributor.localauthorCho, Byung Jin-
dc.contributor.nonIdAuthorLoh, WY-
dc.contributor.nonIdAuthorZang, H-
dc.contributor.nonIdAuthorOh, HJ-
dc.contributor.nonIdAuthorChoi, KJ-
dc.contributor.nonIdAuthorNguyen, HS-
dc.contributor.nonIdAuthorLo, GQ-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorcarbon-
dc.subject.keywordAuthorfield-effect transistor-
dc.subject.keywordAuthorheterostructure-
dc.subject.keywordAuthormobility-
dc.subject.keywordAuthorMOSFETs-
dc.subject.keywordAuthorSiGe-
dc.subject.keywordAuthorsilicon-
dc.subject.keywordPlusTHERMAL-STABILITY-
dc.subject.keywordPlusSILICON-
dc.subject.keywordPlusCARBON-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusDEPENDENCE-
dc.subject.keywordPlusINVERSION-
dc.subject.keywordPlusINTERFACE-
dc.subject.keywordPlusMOSFETS-
dc.subject.keywordPlusBORON-
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