Hybrid Integration of Graphene Analog and Silicon Complementary Metal-Oxide-Semiconductor Digital Circuits

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We demonstrate a hybrid integration of a graphene-based analog circuit and a silicon-based digital circuit in order to exploit the strengths of both graphene and silicon devices. This mixed signal circuit integration was achieved using a three-dimensional (3-D) integration technique where a graphene FET multimode phase shifter is fabricated on top of a silicon complementary metal oxide semiconductor fieldeffect transistor (CMOS FET) ring oscillator. The process integration scheme presented here is compatible with the conventional silicon CMOS process, and thus the graphene circuit can successfully be integrated on current semiconductor technology platforms for various applications. This 3-D integration technique allows us to take advantage of graphene's excellent inherent properties and the maturity of current silicon CMOS technology for future electronics
Publisher
AMER CHEMICAL SOC
Issue Date
2016-07
Language
English
Article Type
Article
Keywords

HIGH-FREQUENCY; MONOLAYER GRAPHENE; TRANSISTORS; ELECTRONICS; CARBON

Citation

ACS NANO, v.10, no.7, pp.7142 - 7146

ISSN
1936-0851
DOI
10.1021/acsnano.6b03382
URI
http://hdl.handle.net/10203/212909
Appears in Collection
EE-Journal Papers(저널논문)
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