NEMS switch with 30 nm-thick beam and 20 nm-thick air-gap for high density non-volatile memory applications

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We developed two types of titanium nitride (TiN) based nanoelectromechanical systems (NEMS) switches with the smallest dimensions ever made by typical "top-down" complementary metaloxide-semiconductor (CMOS) fabrication technology. NEMS cantilever switch (NCLS) and NEMS clamp switch (NCS) with 30 nm-thick TiN beam and 20 nm-thick air-gap were successfully fabricated and electrically characterized. The fabricated NCLS showed ideal on/off current characteristics with an essentially zero off current, a sub-threshold slope of less than 3 mV/decade, and an on/off current ratio over 105 in air ambient. Also, the NCLS exhibited an endurance of over several hundred of switching cycles under dc and ac bias conditions in air ambient. Suspended beam memory (SBM) cell array structure was suggested for high density non-volatile memory applications. (C) 2008 Elsevier Ltd. All rights reserved.
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Issue Date
2008-10
Language
English
Article Type
Article; Proceedings Paper
Keywords

CARBON; TRANSISTOR; NANORELAY; DEVICE; LIMITS

Citation

SOLID-STATE ELECTRONICS, v.52, no.10, pp.1578 - 1583

ISSN
0038-1101
DOI
10.1016/j.sse.2008.06.026
URI
http://hdl.handle.net/10203/91742
Appears in Collection
EE-Journal Papers(저널논문)
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