Browse "PH-Conference Papers(학술회의논문)" by Author 709
Showing results 257 to 316 of 429
| Nitrogen-hydrogen complexes in GaAs 김용성; 장기주, 한국물리학회 봄학술논문발표회, pp.227 - 227, 한국물리학회, 2002-04 |
| O-vacancy in amorphous indium-gallium-zinc oxide thin film transistors: origin of negative bias illumination stress instability Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 한국반도체학술대회, 한국반도체학회, 2011-02 |
| Occurence of local magnetic moment in all-carbon fullerenes and nanotubes Kim, YH; Choi, J; Chang, Kee-Joo; Tomanek, D, International Conference on the Science and Application of Nanotubes, 2003-07 |
| One-dimensional Topological Edge states of MoX2 (X=S, Se, Te) Sung, Ha Jun; Choe, Duk Hyun; Chang, Kee Joo, The 3rd Muju International Winter School Series, SUNGKYUNKWAN UNIVERSITY, 2016-01 |
| Optical Gaps and Phonon Frequencies in Compressed Cubic SiC Cheong, BH; Cohen, ML; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.74 - 74, 한국물리학회, 1991 |
| Optical Properties of SiC Lee, KH; Park, CH; Cheong, BH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.96 - 96, 한국물리학회, 1993 |
| Optical Properties of ZnSSe/ZnMgSSe Strained Quantum Wells Chung, TY; Oh, JH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.220 - 220, 한국물리학회, 1996 |
| Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors Noh, H.-K.; Ryu, B.; Choi, E.-A.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society , 2011-04 |
| Origin of the hole gas in Ge/Si core-shell nanowires Park, J.-S.; Ryu, B.; Moon, C.-Y.; Chang, Kee-Joo, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2010-04 |
| Oscillating Magnetizations of Multi-quantum Well Structures in Tilted Magnetic Fields Oh, JH; Ihm, G; Chang, Kee-Joo, Semiconductor Physics Symposium, pp.234 - 248, 1993 |
| Oscillation Magnetizations Multi-Quantum Well Structures in Tilted Magnetic Fields Chang, Kee-Joo, 4th Semiconductor Physics Symposium107, SPRC, 1994-01-01 |
| Overview of first-principles electronic structure calculations in condensed matter physics 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2011-04 |
| Oxygen Adsorption and Cap Opening in Capped Carbon Nanotubes Moon, CY; Kim, YS; Lee, EC; Jin, YG; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.342 - 342, 한국물리학회, 2000 |
| Phase separation and pseudogap in mixded phase manganites 이홍석; 김용현; 장기주, 한국자기학회 2001년도 추계연구발표회, pp.26 - 27, 한국자기학회, 2001 |
| Physical Properties of Shallow Donors and DX Centers in GaAs and $Al_xGa_{(1-x)}As$ Alloys Cheong, BH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.253 - 253, 한국물리학회, 1991 |
| Physics and Device Applications of Semiconductor Nanostructures 장기주, 제2회 한국반도체 학술대회195, KPS, 1995-01-01 |
| Pressure Dependence of the Band Gaps in Diamond Fahy, S; Louis, SG; Cohen, ML; Chang, Kee-Joo, Bull. Am. Phys. Soc., pp.855 - 855, APS, 1987 |
| Pseudogap and conductance in mixed-phase manganites Yi, H; Kim, YH; Chang, Kee-Joo, 한국물리학회 가을학술대회, 한국물리학회, 2001-10 |
| Quantum spin Hall insulators with tunable topological edge states in 1T'-MoX2 (X=S, Se, Te) nanoribbons Sung, Ha Jun; Choe, Duk Hyun; Chang, Kee Joo, The 18th International Symposium on the Physics of Semiconductors and Applications, 한국물리학회, 2016-07 |
| Quasiparticle energy calculations of the defect states of oxygen vacancy in HfO2 장기주; 최은애, The 5th KIAS Electronic Structure Calculation Workshop, 2009-06 |
| Qunatized conductance in Na atomic wires and magnetic ordering in heterostructured C/BN nanotubes Chang, Kee-Joo, 14th Annual Workshop on Recent Developments in Electronic Structure Methods, 2002-06 |
| Real-space Electronic Structure Calculations in the Generalized Gradient Approximation: Application to SiO$_2$ Jin, YG; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.84 - 84, 한국물리학회, 1999 |
| Real-space electronic structure calculations of native defects in SiO_2 Jin, YG; Chang, Kee-Joo, 2nd Korea-Japan Joint Workshop on Electronic Structure Calculations, pp.29 - 29, 1999-11 |
| Real-space Electronic Structure Calculations Using a Multigrid method Jin, YG; Jeong, JW; Chang, Kee-Joo, APCTP/ICTP Joint International Conference on Highlights in Condensed Matter Physics, APCTP/ICTP, 1998-06 |
| Real-space Electronic Structure Calculations Using a Multigrid method Jin, YG; Jeong, JW; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.72 - 72, 한국물리학회, 1998 |
| Real-space Electronic Structure Calculations using a Multigrid Method; Applictions to Periodic and Nonperiodic Systems Jin, YG; Chang, Kee-Joo, Bull. Am. Phys. Soc., pp.203 - 203, APS, 1999 |
| Real-space multigrid electronic structure calculations and applications Jin, AG; Chang, Kee-Joo, 2nd Korea-Japan Joint Workshop on Electronic Structure Calculations, pp.13 - 13, 1999-11 |
| Real-space Multigrid Electronic Structure Calculations of Defects in SiO2 Jin, YG; Chang, Kee-Joo, 3rd Japan-Korea Joint Workshop on First-principles Electronic Structure Calculations, 2000 |
| Resonant transport in carbon nanotubes encapsulating C60 Kim, DH; Sim, HS; Chang, Kee-Joo, International Workshop on Quantum Transport in Symthetic Metals and Quantum Functional Semiconductor, pp.75 - 75, 2001-05 |
| Role of defects in device stability based on amorphous oxide semiconductors 장기주, Oxide TFT Workshop 및 TFT Stability 토론회, 2010-11 |
| Role of defects on direct electron tunneling through ultra-thin SiO_2 Chang, Kee-Joo; Kang, J.; Bang, J.; Kim, Y.-H., The 24th International Conference on Defects in Semiconductors, 2007-05 |
| Role of defects on the electronic and magnetic properties of Mn-doped GaN 장기주, 21COE Workshop in Korea, 21COE, 2007 |
| Role of hydrogen and O-vacancy in n-type conductivity in ZnO Chang, Kee-Joo; Bang, J.; Lee, W.-J.; Ryu, B.; Choi, E.-A., 2007 KPS Falll Meeting, KPS, 2007-10 |
| Role of hydrogen in the n-type conductivity of ZnO Chang, Kee-Joo; Bang, J., The 14th International Symposium on the Physics of Semiconductors and Applications, 2008-08 |
| Role of O-vacancy defects in devices based on high-k dielectrics and amorphous oxide semiconductors Chang, Kee-Joo; Ryu, B.; Noh, H.-K.; Choi, E.-A., 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation, ACCMS, 2011-03 |
| Role of oxygen vacancy in n-type conductivity in InGaO_3(ZnO)_m 장기주; 이우진; 류병기, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2009-04 |
| Schottky barrier heights and effective work functions at various TiAlN/HfO2 interface 김근명; 오영준; 장기주, 한국물리학회 봄 학술논문발표회, 한국물리학회, 2015-04 |
| Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks Noh, HK; Oh, Y. J.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011 |
| Science and Design of nano-materials and nano-devices 장기주, 컴퓨터 모델링을 이용한 재료설계 개발 심포지움, 2003-06-09 |
| Segregation and diffusion of boron dopants in the Si/SiO2 interface Oh, YJ; Noh, HK; Kim, GM; Chang, Kee-Joo, 2012 APS March Meeting, APS, 2012-02 |
| Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 |
| Self-compensation Mechanism of Dopants in p-type ZnSe Park, CH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.75 - 75, 한국물리학회, 1997 |
| Semiconductor-metal transition in crystalline bundles of aluminate nanotubes Chang, Kee-Joo, The Korea-Max-Planck-Institute Joint Symposium, 2007-10-04 |
| Si Cluster and Hydrogen in Si Lee, IH; Chang, Kee-Joo, Symposium of Center of Molecular Science, pp.81 - 87, 1992 |
| Single Adatom Exchange in Surfactant-mediated Epitaxial Growth Ko, YJ; Yi, JY; Park, SJ; Lee, EH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.343 - 343, 한국물리학회, 1995 |
| Skyrmion Excitations in a Quantum Dot Ahn, KH; Oh, JH; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.328 - 328, 한국물리학회, 1995 |
| Spheroidal Quantum Dots in Tilted Magnetic Fields Oh, JH; Ihm, G; Lee, SJ; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.360 - 360, 한국물리학회, 1993 |
| Stability and deactivation of dopant levels in silicon nanowires Chang, Kee-Joo; Ryu, B.; Lee, W.-J.; Moon, C.-Y., CECAM Workshop on Dopants and Impurities in Semiconducting Nanowires, 2009-07 |
| Stability and deactivation of dopants in silicon nanowires Chang, Kee-Joo; Ryu, B.; Lee, W.-J.; Moon, C.-Y., The 11th Nanowire Research Society Meeting and Nano Korea 2009 Satellite Session, 2009-08-28 |
| Stability and diffusion of hydrogen in Mg-doped GaN 박지상; 장기주, The 7th KIAS Electronic Structure Calculation Workshop, KIAS, 2011-06 |
| Stability and electronic structure of donor-pair defects in Si1-xGex alloy nanowires Park, JS; Ryu, B; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011-10 |
| Stability and Hydrogen Passivation of C Acceptors in InAs Lee, SG; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.13 - 13, 한국물리학회, 1995 |
| Stability and Local Vibrational Mode of the DX center in GaAs under Hydrostatic Pressure Cheong, BH; Chang, Kee-Joo, International Conference on the Physics of Semiconductors, pp.1569 - 1572, 1992 |
| Stability and Migration Mechanism of Self-interstitials in Si Lee, WC; Lee, SG; Chang, Kee-Joo, 한국물리학회 학술발표회, pp.358 - 358, 한국물리학회, 1995 |
| Stability and segregation of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04 |
| Stability and segregation of boron dopants in the interface structure between Si and amorphous SiO2 오영준; 노현균; 장기주, 한국물리학회 가을 학술논문발표회 v. no. , 한국물리학회, 2011-10 |
| Stability of $In_{0.5}Ga_{0.5}$P alloy-based superlattices and DX centers in GaAs and $Al_xGa_{1-x}As$ Alloys Park, CH; Jeong, BH; Chang, Kee-Joo, Koreaz-Japan Symposium on Defects and Impurity-related Properties of Semicoonductors, pp.51 - 56, 1991 |
| Stability of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02 |
| Stability of boron dopants near the interface between Si and amorphous SiO2 Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation v. no. , ACCMS , 2011-03 |
| Stability of cubic GaN doped with 3d-transition metal ions Chang, Kee-Joo; Choi, E.-A., The 3rd Electronic Structure Calculation Workshop, KIAS, 2007-06-19 |
Discover
Type
- 2 Article
- 4,334 Conference
Date issued
- 306 2020 - 2024
- 1,344 2010 - 2019
- 1,118 2000 - 2009
- 1,179 1990 - 1999
- 327 1980 - 1989