Origin of device instability in amorphous indium-gallium-zinc oxide thin film transistors

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Description
물리학과
Publisher
Materials Research Society
Issue Date
2011-04
Language
English
Citation

2011 Materials Research Society (MRS) Spring Meeting

URI
http://hdl.handle.net/10203/168587
Appears in Collection
PH-Conference Papers(학술회의논문)
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