Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks

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Publisher
The University of Tokyo
Issue Date
2011
Language
ENG
Citation

The 14th Asian Workshop on First-Principles Electronic Structure Calculations

URI
http://hdl.handle.net/10203/168607
Appears in Collection
PH-Conference Papers(학술회의논문)
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