Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks

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dc.contributor.authorNoh, HK-
dc.contributor.authorOh, Y. J.-
dc.contributor.authorChang, Kee-Joo-
dc.date.accessioned2013-03-29T07:03:02Z-
dc.date.available2013-03-29T07:03:02Z-
dc.date.created2012-04-06-
dc.date.issued2011-
dc.identifier.citationThe 14th Asian Workshop on First-Principles Electronic Structure Calculations, v., no., pp. --
dc.identifier.urihttp://hdl.handle.net/10203/168607-
dc.languageENG-
dc.publisherThe University of Tokyo-
dc.titleSchottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks-
dc.typeConference-
dc.type.rimsCONF-
dc.citation.publicationnameThe 14th Asian Workshop on First-Principles Electronic Structure Calculations-
dc.contributor.localauthorChang, Kee-Joo-
dc.contributor.nonIdAuthorNoh, HK-
dc.contributor.nonIdAuthorOh, Y. J.-
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PH-Conference Papers(학술회의논문)
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