Browse "Dept. of Materials Science and Engineering(신소재공학과)" by Author Ahn, Byung Tae

Showing results 152 to 211 of 313

152
High power operation of non-biased optical bistable devices using multiple shallow quantum well pinip diodes

Ahn, Byung Tae, The 1997 International Conference on Solid State Devices and Materials(SSDM97), pp.0 - 0, 1997-09-01

153
High power performance of nonbiased optical bistable devices using multiple shallow quantum well p-i-n-i-p diodes

Kwon, OK; Lee, KS; Lee, EH; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.3B, pp.1418 - 1420, 1998-03

154
High Resolution Transmission Electron Microscopy of Partial States of Oxygen Order in YBa2CuO7-x

Ahn, Byung Tae, MRS Symposium Proc., 183, pp.369 - 374, 1990

155
High-Performance Poly-Si TFT Using a Poly-Si Film Prepared by a Silicide-Enhanced Rapid Thermal Annealing (SERTA) Process

Ahn, Byung Tae; Moon, Seonhong; Yang, Yongho; Kang, Seungmo; Kim, Jonsu, IMID 2013, The Korean Information Display Society, The Society for Information Display, 2013-08-29

156
High-Temperature Phase Equilibria Near YBa2Cu3O6+x

Ahn, Byung Tae; Lee, VY; Beyers, R; Gur, TM; Huggins, RA, PHYSICA C, v.162-164, pp.883 - 884, 1989-12

157
Highly Asymmetric n(+)-p Heterojunction Quantum-Dot Solar Cells with Significantly Improved Charge-Collection Efficiencies

Choi, Minjae; Kim, Sunchuel; Lim, Hunhee; Choi, Jaesuk; Sim, Dong Min; Yim, Soonmin; Ahn, Byung Tae; et al, ADVANCED MATERIALS, v.28, no.9, pp.1780 - 1787, 2016-03

158
Hot-Wire CVD방법을 이용한 저온 에피택셜 실리콘 박막의 표면 텍스처 형성

Ahn, Byung Tae, 한국재료학회 추계학술발표대회, 2007-11-02

159
Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane

Jang, TW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.33, pp.125 - 128, 1998-11

160
Hydrogen plasma pretreatment effect on the deposition of aluminum thin films from metalorganic chemical vapor deposition using dimethylethylamine alane

Jang, TW; Rhee, HS; Ahn, Byung Tae, JOURNAL OF VACUUM SCIENCE TECHNOLOGY A-VACUUM SURFACES AND FILMS, v.17, no.3, pp.1031 - 1035, 1999

161
Improved morphological stability of CoSi2 layer by in situ growth on polycrystalline silicon using reactive chemical vapor deposition

Lee, HS; Rhee, HS; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.149, no.1, pp.16 - 20, 2002-01

162
Improvement in thermal stability of chemical vapor deposition CoSi 2/polycrystalline silicon using tin and amorphous silicon interlayers

Hong J.E.; Kim S.I.; Ahn, Byung Tae; Lee H.S., JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS , v.45, no.2 A, pp.710 - 713, 2006-02

163
Improvement in Thermal Stability of Nickel Silicides Using NiNx Films

Kim, Sun Il; Lee, Seung Ryul; Ahn, Kyung Min; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.3, pp.231 - 234, 2010

164
Improvement of CIGS microstructure and its effect on the conversion efficiency of CIGS solar cells

Kim, KH; Kim, MS; Ahn, Byung Tae; Yoon, JH; Yoon, KH, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, pp.575 - 578, 2006-05-07

165
Improvement of Grain Size by Crystallization of Double-Layer Amorphous Silicon Films

Kang, Sang Won; Ahn, Byung Tae, Mat. Res. Soc. Symp. Proc., pp.111 - 116, 1994-01-01

166
Improvement of Performance by Insertion of SnO2 Blocking Layer between FTO and Photoelectrode in Dye Sensitized Solar Cells

Yong, Seok-Min; Nikolay, Tsvetkov; Larina, Liudmila; Ahn, Byung Tae; Kim, Do Kyung, International Union of Materials Research Societies-International Conference in Asia 2012 (IUMRS-ICA 2012), Materials Research Society of Korea, International Union of Materials Research Societies, 2012-08-26

167
Improvement of the cell performance in the ZnS/Cu(In,Ga)Se2 solar cells by the sputter deposition of a bilayer ZnO:Al film

Shin, Dong Hyeop; Kim, Ji Hye; Shin, Young Min; Yoon, Kyung Hoon; Al-Ammar, Essam A.; Ahn, Byung Tae, PROGRESS IN PHOTOVOLTAICS, v.21, no.2, pp.217 - 225, 2013-03

168
In situ growth of an epitaxial CoSi2 layer on a Si(100) substrate by reactive chemical-vapor deposition using a cobalt metallorganic source

Rhee, HS; Ahn, Byung Tae, APPLIED PHYSICS LETTERS, v.74, no.21, pp.3176 - 3178, 1999-05

169
In-situ growth and growth kinetics of epitaxial (100) CoSi2 layer on (100) Si by reactive chemical vapor deposition

Rhee, Hwa Sung; Lee, Heui Seung; Park, Jong Ho; Ahn, Byung Tae, Gate Stack and Silicide Issues in Silicon Processing, v.611, pp.0 - 0, 2000-04-25

170
In-situ Transmission Electron Microscopy and Computer Simulation Study of the Kinetics of Oxygen Loss in YBa2Cu3O7

Ahn, Byung Tae, MRS Symposium Proc., 169, pp.831 - 834, 1990

171
In:Se/CuGa 전구체를 이용한 CIGS 태양전지 제조에서의 결정 성장과 Ga 분포에 대한 연구 = Microstructural evolution and Ga distribution study in CIGS films from In:Se/CuGa stacked precursorslink

문선홍; 안병태; et al, 한국과학기술원, 2018

172
Increase in conversion efficiency of above 14% in Cu(In,Ga)(3)Se-5 (beta-CIGS) solar cells by Na2S incorporation through the surface of beta -CIGS film

Kim, Ji Hye; Kim, Seung Tae; Liudmila, Larina; Ahn, Byung Tae; Kim, KiHwan; Yun, Jae Ho, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.179, pp.289 - 296, 2018-06

173
Influence of Defect Chalcopyrite Layer thickness on Mo/CuInSe2/In2Se3/ZnO/ITO/Al Solar Cell Performance

Ahn, Byung Tae, 14th European Photovoltaic Solar Energy Conference, pp.0 - 0, 1997-07-01

174
Interfacial reaction between aluminum metal and boron-doped polysilicon in a planar type antifuse device

Baek, JT; Park, HH; Ahn, Byung Tae; Jun, CH; Kim, YT; Song, YH; Kim, J, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.37, no.5A, pp.2451 - 2454, 1998-05

175
Interfacial reaction in the sputter-deposited SiO2/Ti0.1W0.9 antifuse system

Baek, Jong Tae; Park, Hyung-Ho; Cho, Kyung-Ik; Yoo, Hyung Joun; Kang, Sang-Won; Ahn, Byung Tae, JOURNAL OF APPLIED PHYSICS, v.78, no.12, pp.7074 - 7079, 1995-12

176
International Thin Film Transistors Conference 2005 (ITS 2005)

Ahn, Byung Tae, International TFT Conference Organizing Committee, 2005-03-01

177
Interstitial oxygen incorporation into silicon substrate during plasma enhanced atomic layer deposition of Al2O3

Kim, H; Jeon, WS; Jung, SH; Ahn, Byung Tae, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.8, no.10, pp.294 - 296, 2005

178
Investigation of link formation in a novel planar-type antifuse structure

Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Hyung Joun, THIN SOLID FILMS, v.288, no.1-2, pp.41 - 44, 1996-11

179
Investigation of link formation in a novel planar-type antifuse structure

Baek, Jong Tae; Park, Hyun-Ho; Kang, Sang Won; Ahn, Byung Tae; Yoo, Ilyung Joun, Thin Solid Films, Vol.288, No.1-2, pp.41-44, 1996-11-15

180
Investigation of link formation in a novel planar-type antifuse structure

Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Ilyung, Thin Solid Films, 288, 41-44, 1996-02-20

181
Investigation of link formation in a novel planar-type antifuse structure

Baek, Jong Tae; Park, Hyung-Ho; Kang, Sang-Won; Ahn, Byung Tae; Yoo, Hyung-Joun, Thin Solid Films 288 (1996) 41--44, 1996-02

182
Layer-by-layer thin films of carbon nanotubes

Palumbo, M; Lee, KU; Ahn, Byung Tae; Suri, A; Coleman, K; Zeze, D; Wood, D; et al, 2005 MRS Fall Meeting, v.901, pp.92 - 97, 2005-11-28

183
Low Temperature Synthesis of Eu-Doped Cubic Phase BaAl2S4 Blue Phosphor Using H3BO3 or B2O3 Flux

Cho, Yang Hwi; Chalapathy, R. B. V.; Park, Do Hyung; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.3, pp.45 - 49, 2010

184
Low Threshold Current and Single-Mode SurfaceEmitting Laser Buried on Amorphous GaAs

Ahn, Byung Tae; Park, HH; You, BS; Chu, HY; Lee, EH; Park, MS, JAPANESE JOURNAL OF APPLIED PHYSICS , v.35, no.2, pp.1378 - 1381, 1996-12

185
Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs

Ahn, Byung Tae, the 1995 International Conference on Solid State Devices and Materials (SSDM95), pp.443 - 445, 1995

186
Low-temperature crystallization of amorphous Si films by metal adsorption and diffusion

Sohn, DK; Lee, JN; Kang, SW; Ahn, Byung Tae, JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES REVIEW PAPERS, v.35, no.2B, pp.1005 - 1009, 1996-02

187
Low-temperature crystallization of amorphous Si films using AICl(3) vapor

Ahn, JH; Eom, JH; Yoon, KH; Ahn, Byung Tae, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.74, no.1-4, pp.315 - 321, 2002-10

188
Low-temperature crystallization of amorphous silicon thin films by microwave heating

Lee, Jeong No; Kim, Yoon Chang; Choi, Yong Woo; Ahn, Byung Tae, Proceedings of the 1997 MRS Spring Meeting, pp.173 - 178, MRS, 1997-03-31

189
Low-temperature Epitaxial Growth of a Uniform Polycrystalline Si Film with Large Grains on SiO2 Substrate by Al-assisted Crystal Growth

Ahn, Kyung-Min; Kang, Seung-Mo; Moon, Seon Hong; Kwon, Hyuk-Sang; Ahn, Byung Tae, Current Photovoltaic Research, v.1, no.2, pp.103 - 108, 2013-12

190
Low-temperature formation of epitaxial T12Ca2Ba2Cu3O10 thin films in reduced O2 pressure

Lee, W. Y.; Garrison, S. M.; Kawasaki, M.; Venturini, E . L.; Ahn, Byung Tae; Boyers, R.; Salem, J.; et al, APPLIED PHYSICS LETTERS, v.60, pp.772 - 774, 1991-12

191
LOW-TEMPERATURE FORMATION OF EPITAXIAL TL2CA2BA2CU3O10 THIN-FILMS IN REDUCED O2 PRESSURE

Lee, WY; Garrison, SM; Kawasaki, M; Venturini, EL; Ahn, Byung Tae; Boyers, R; Salem, J; et al, APPLIED PHYSICS LETTERS, v.60, no.6, pp.772 - 774, 1992-02

192
Low-temperature preparation of boron-doped nanocrystalline SiC : H films using mercury-sensitized photo-CVD technique

Myong, SY; Kim, TH; Lim, KS; Kim, KH; Ahn, Byung Tae; Miyajima, S; Konagai, M, SOLAR ENERGY MATERIALS AND SOLAR CELLS, v.81, no.4, pp.485 - 493, 2004-03

193
Low-temperature synthesis of Eu-doped cubic phase BaAl2S4 blue phosphor using liquid-phase reaction

Cho, Yang Hwi; Park, Do Hyung; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.1, pp.41 - 44, 2008

194
Luminescent and Structural Properties of a Eu-doped BaAl2S4 Thin Film prepared by Sputtering and Sulfurization

Ahn, Byung Tae, EL-2008, 2008-09-09

195
MAGNETIC AND RECORDING PROPERTIES OF SPUTTERED COCRTA/CR THIN-FILM MEDIA

LEE, JH; KWON, SH; Ahn, Byung Tae; IM, HB, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, v.5, no.6, pp.347 - 351, 1994-12

196
Mechanism of enhanced crystallization of amorphous Si thin films by microwave annealing

Ahn, JH; Ahn, Byung Tae, ELECTRONIC MATERIALS LETTERS, v.3, no.2, pp.69 - 74, 2007-06

197
Mechanism understanding of the device performance change in the Zn(S,O)/Cu(In,Ga)Se2 solar cell with thermal annealing

Ahn, Byung Tae; Shin, Donghyeop; Kim, Jihye; Kim, Seungtae; Kwon, Hyuk-Sang; Kang, Huijae, PVSEC-23, SEMI, NSTP-Energy, 2013-10-30

198
Method of the production of polycrystalline silicon thin films

Ahn, Byung Tae; Moon, Dae G.; Lee, Jeong N.

199
Microstructural characterization of polycrystalline Si films grown by vapor-induced crystallization of amorphous Si using Al/Ni chloride

Eom, Ji Hye; Lee, Kye Ung; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.154, no.3, pp.194 - 197, 2007

200
Microstructural evolution of polycrystalline Si films during Ni-silicide-mediated lateral crystallization

Ahn, JH; Eom, JH; Ahn, Byung Tae, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.151, no.6, pp.141 - 144, 2004

201
Microstructural improvement in polycrystalline Si films by crystallizing with vapor transport of Al/Ni chlorides

Ahn, Byung Tae, International Meeting on Information Display, pp.0 - 0, 2004-08-01

202
Microstructural study of polycrystalline films prepared by Ni vapor induced crystallization

Ahn, Kyung Min; Lee, Kye Ung; Ahn, Byung Tae, IMID/IDMC 2006: 6th Internaional Meeting on Information Display and the 5th International Display Manufacturing Conference, pp.715 - 717, 2006-08-22

203
Microstructural transition and Grading Phenomena of CIGS Film by Sputtering and Selenization Process with a Novel Approach

Ahn, Byung Tae, 한국신재생에너지학회 추계학술대회, 2007-11-06

204
Microstructural Transition of Cu(In,Ga)Se2 Film by Sputtering and Selenization Process with a Novel Approach

Ahn, Byung Tae, 22-European PVSEC, 2007-09-03

205
Microwave-Enhanced Low-Temperature crystallization of Amorphous Silicon Films for TFTs

Ahn, Byung Tae, International Meeting on Information Diplay, pp.177 - 180, 2002-08-01

206
Microwave-induced low-temperature crystallization of amorphous Si thin films

Ahn, JH; Lee, JN; Kim, YC; Ahn, Byung Tae, CURRENT APPLIED PHYSICS, v.2, pp.135 - 139, 2002

207
Microwave-induced low-temperature crystallization of amorphous silicon thin films

Lee, JN; Choi, YW; Lee, BJ; Ahn, Byung Tae, JOURNAL OF APPLIED PHYSICS, v.82, pp.2918 - 2921, 1997

208
MOCVD of Titanium Nitride from a New Precursor Ti[N(CH3)C2H5]4

Shin, HK; Shin, HJ; Lee, JG; Kang, SW; Ahn, Byung Tae, CHEMISTRY OF MATERIALS, v.9, no.1, pp.76 - 80, 1997-01

209
$Na_2S$를 사용한 후속공정으로 개선된 $Cu(In,Ga)Se_2$ 박막의 표면 특성과 이를 활용한 고효율 CIGS 태양전지 제조 = Surface modification of $Cu(In,Ga)Se_2$ films using $Na_2S$ post-deposition treatment for high efficiency $Cu(In,Ga)Se_2$ solar cellslink

김승태; 안병태; et al, 한국과학기술원, 2018

210
New Buffer Layer for Cu(In,Ga)Se2 Solar Cells

Ahn, Byung Tae, International Symposium for the 55th Anniversary of CNU, 2007-10-24

211
New crystallization Process of LPCVD a- Si Films below 530 C Using Metal Adsorption Method

Ahn, Byung Tae, the 1995 International Conference on Solid State Devices and Materials (SSDM95), pp.902 - 904, 1995

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