Investigation of link formation in a novel planar-type antifuse structure

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A novel antifuse structure with planar-type polysilicon pad is described. The formation of a link between the aluminum electrodes after application of a programming voltage was also investigated. The structure consists of Al/SiO2/poly-Si/SiO2/Al layers. The poly-Si pac! was doped with boron and the thickness of the antifuse dielectric was 9 nm. When a programming voltage is applied, the electrodes are connected by the mass transfer of aluminum through the dielectric and the doped polysilicon pad. The on-state resistance of about 10 Omega, which is the lowest on-state resistance ever reported, is obtained after breakdown with 9.9 V programming voltage. Scanning Anger microscopy analyses show the propagation of a link, as mass transfer of aluminum in the boron doped polysilicon pad. The elliptical link has a maximum diameter of 1.0 mu m in the horizontal direction and a minimum diameter of 320 nm in the vertical direction.
Publisher
Elsevier
Issue Date
1996-11-15
Keywords

antifuse structure; link formation

Citation

Thin Solid Films, Vol.288, No.1-2, pp.41-44

ISSN
0040-6090
DOI
10.1016/S0040-6090(96)08812-8
URI
http://hdl.handle.net/10203/9514
Appears in Collection
MS-Journal Papers(저널논문)

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