In-situ growth and growth kinetics of epitaxial (100) CoSi2 layer on (100) Si by reactive chemical vapor deposition
- Issue Date
- 2000-04-25
- Language
- ENG
- Citation
Gate Stack and Silicide Issues in Silicon Processing, v.611, pp.0 - 0
- ISSN
- 0272-9172
- Appears in Collection
- MS-Conference Papers(학술회의논문)
- Files in This Item
- There are no files associated with this item.
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