DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rhee, Hwa Sung | - |
dc.contributor.author | Lee, Heui Seung | - |
dc.contributor.author | Park, Jong Ho | - |
dc.contributor.author | Ahn, Byung Tae | - |
dc.date.accessioned | 2013-03-16T07:44:56Z | - |
dc.date.available | 2013-03-16T07:44:56Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 2000-04-25 | - |
dc.identifier.citation | Gate Stack and Silicide Issues in Silicon Processing, v.611, no., pp.0 - 0 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | http://hdl.handle.net/10203/129003 | - |
dc.language | ENG | - |
dc.title | In-situ growth and growth kinetics of epitaxial (100) CoSi2 layer on (100) Si by reactive chemical vapor deposition | - |
dc.type | Conference | - |
dc.identifier.scopusid | 2-s2.0-0035025720 | - |
dc.type.rims | CONF | - |
dc.citation.volume | 611 | - |
dc.citation.beginningpage | 0 | - |
dc.citation.endingpage | 0 | - |
dc.citation.publicationname | Gate Stack and Silicide Issues in Silicon Processing | - |
dc.identifier.conferencecountry | United States | - |
dc.identifier.conferencecountry | United States | - |
dc.contributor.localauthor | Ahn, Byung Tae | - |
dc.contributor.nonIdAuthor | Rhee, Hwa Sung | - |
dc.contributor.nonIdAuthor | Lee, Heui Seung | - |
dc.contributor.nonIdAuthor | Park, Jong Ho | - |
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