Hydrogen plasma effect on aluminum thin films deposition from CVD using dimethylethylamine Alane

Abstract

To study the effect of pre-treatment of substrates on the deposition behavior of Al films, the surfaces of TiN and SiO2 substrates were exposed to hydrogen plasma or Ar plasma before Al deposition. The Al films were deposited by the pyrolysis of dimethylethylamine alane (DMEAA). A uniform Al film was deposited by the hydrogen plasma exposure of SiO2 substrate, while island grains were grown due to Ar plasma exposure. The pre-treatments of TiN substrate did not affect the deposition rate of Al film. The concentration of OH radicals at the SiO2 surface was increased by the hydrogen plasma treatment. We suggest that;the OH radicals enhance the adsorption of DMEAA on SiO2 surface, resulting in the larger number of nucleation sites.