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Results 11-20 of 28 (Search time: 0.006 seconds).

NO Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date)
11
Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Song, JJ; Keller, S; Minsky, MS; Hu, E; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.8, pp.1128 - 1130, 1998-08

12
Effects of substrate misorientation on the formation and characteristics of self-assembled InP/InGaP quantum dots

Kwon, YH; Cho, Yong-Hoon; Choe, BD; Park, SK; Jeong, WG, JAPANESE JOURNAL OF APPLIED PHYSICS, v.37, no.4A, pp.366 - 368, 1998-04

13
Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.25, pp.3689 - 3691, 1998-12

14
Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions

Kwon, YH; Gainer, GH; Bidnyk, S; Cho, Yong-Hoon; Song, JJ; Hansen, M; DenBaars, SP, APPLIED PHYSICS LETTERS, v.75, no.17, pp.2545 - 2547, 1999-10

15
Stimulated emission in GaN thin films in the temperature range of 300-700 K

Bidnyk, S; Little, BD; Schmidt, TJ; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Goldenberg, B; Yang, W; Perry, WG; Bremser, MD; Davis, RF, JOURNAL OF APPLIED PHYSICS, v.85, no.3, pp.1792 - 1795, 1999-02

16
Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells

Schmidt, TJ; Bidnyk, S; Cho, Yong-Hoon; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4, 1999

17
Pump-probe spectroscopy of band tail states in metalorganic chemical vapor deposition-grown InGaN

Schmidt, TJ; Cho, Yong-Hoon; Gainer, GH; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.13, pp.1892 - 1894, 1998-09

18
"S-shaped" temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells

Cho, Yong-Hoon; Gainer, GH; Fischer, AJ; Song, JJ; Keller, S; Mishra, UK; DenBaars, SP, APPLIED PHYSICS LETTERS, v.73, no.10, pp.1370 - 1372, 1998-09

19
Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth

Bidnyk, S; Little, BD; Cho, Yong-Hoon; Krasinski, J; Song, JJ; Yang, W; McPherson, SA, APPLIED PHYSICS LETTERS, v.73, no.16, pp.2242 - 2244, 1998-10

20
Dynamics of anti-Stokes photoluminescence in type-II AlxGa1-xAs-GaInP2 heterostructures: The important role of long-lived carriers near the interface

Cho, Yong-Hoon; Kim, DS; Choe, BD; Lim, H; Lee, JI; Kim, D, PHYSICAL REVIEW B, v.56, pp.R4375 - R4378, 1997

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