Structural and optical characteristics of InxGa1-xN/GaN multiple quantum wells with different In compositions

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We have studied the structural and optical properties of InxGa1-xN/GaN multiple quantum wells with different In compositions of 8.8%, 12.0%, and 13.3% by means of high-resolution x-ray diffraction (HRXRD), photoluminescence (PL), PL excitation (PLE), stimulated emission (SE), and time-resolved PL spectroscopy. As the In composition increases, the superlattice peaks in HRXRD measurements and the PLE band edge broaden, indicating the deterioration of interface quality due to the difficulty of uniform In incorporation into the GaN layer. However, the lower room-temperature SE threshold densities of the higher In concentration samples indicate that the effect of In suppressing nonradiative recombination overcomes the drawbacks associated with increasing interface imperfection. (C) 1999 American Institute of Physics. [S0003- 6951(99)01543-0].
Publisher
AMER INST PHYSICS
Issue Date
1999-10
Language
English
Article Type
Article
Keywords

CONTINUOUS-WAVE OPERATION; STRUCTURE LASER-DIODES

Citation

APPLIED PHYSICS LETTERS, v.75, no.17, pp.2545 - 2547

ISSN
0003-6951
DOI
10.1063/1.125072
URI
http://hdl.handle.net/10203/75988
Appears in Collection
PH-Journal Papers(저널논문)
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