Amplification path length dependence studies of stimulated emission from optically pumped InGaN/GaN multiple quantum wells

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Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (L-exc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 434 nm at 10 K (438 nm at 300 K). The SE threshold for the high energy peak was observed to always be lower than that of the low energy peak, but the difference was found to decrease greatly with increasing L-exc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region.
Publisher
MATERIALS RESEARCH SOCIETY
Issue Date
1999
Language
English
Article Type
Article
Keywords

CONTINUOUS-WAVE OPERATION; STRUCTURE LASER-DIODES; GAIN SPECTROSCOPY; SINGLE; GAN; EXCITON

Citation

MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, v.4

ISSN
1092-5783
URI
http://hdl.handle.net/10203/76517
Appears in Collection
PH-Journal Papers(저널논문)
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