Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence

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Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (L-exc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 433 nm at 10 K (438 nm at 300 K). The SE threshold for the high-energy peak was observed to always be lower than that of the low-energy peak, but the difference was found to decrease greatly with increasing L-exc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region. (C) 1998 American Institute of Physics. [S0003-6951(98)00551-8].
Publisher
AMER INST PHYSICS
Issue Date
1998-12
Language
English
Article Type
Article
Keywords

CONTINUOUS-WAVE OPERATION; STRUCTURE LASER-DIODES

Citation

APPLIED PHYSICS LETTERS, v.73, no.25, pp.3689 - 3691

ISSN
0003-6951
DOI
10.1063/1.122864
URI
http://hdl.handle.net/10203/75992
Appears in Collection
PH-Journal Papers(저널논문)
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