DC Field | Value | Language |
---|---|---|
dc.contributor.author | Schmidt, TJ | ko |
dc.contributor.author | Bidnyk, S | ko |
dc.contributor.author | Cho, Yong-Hoon | ko |
dc.contributor.author | Fischer, AJ | ko |
dc.contributor.author | Song, JJ | ko |
dc.contributor.author | Keller, S | ko |
dc.contributor.author | Mishra, UK | ko |
dc.contributor.author | DenBaars, SP | ko |
dc.date.accessioned | 2013-03-02T23:20:54Z | - |
dc.date.available | 2013-03-02T23:20:54Z | - |
dc.date.created | 2012-02-06 | - |
dc.date.created | 2012-02-06 | - |
dc.date.issued | 1998-12 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v.73, no.25, pp.3689 - 3691 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | http://hdl.handle.net/10203/75992 | - |
dc.description.abstract | Optically pumped stimulated emission (SE) from InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic chemical vapor deposition has been systematically studied as a function of excitation length (L-exc). Two distinct SE peaks were observed from these structures: one that originates at 425 nm at 10 K (430 nm at 300 K) and another that originates at 433 nm at 10 K (438 nm at 300 K). The SE threshold for the high-energy peak was observed to always be lower than that of the low-energy peak, but the difference was found to decrease greatly with increasing L-exc. A detailed study of the emission intensity of these two SE peaks as a function of excitation density shows that the two peaks compete for gain in the MQW active region. (C) 1998 American Institute of Physics. [S0003-6951(98)00551-8]. | - |
dc.language | English | - |
dc.publisher | AMER INST PHYSICS | - |
dc.subject | CONTINUOUS-WAVE OPERATION | - |
dc.subject | STRUCTURE LASER-DIODES | - |
dc.title | Stimulated emission characteristics of InGaN/GaN multiple quantum wells: Excitation length and excitation density dependence | - |
dc.type | Article | - |
dc.identifier.wosid | 000077458200021 | - |
dc.identifier.scopusid | 2-s2.0-0032556593 | - |
dc.type.rims | ART | - |
dc.citation.volume | 73 | - |
dc.citation.issue | 25 | - |
dc.citation.beginningpage | 3689 | - |
dc.citation.endingpage | 3691 | - |
dc.citation.publicationname | APPLIED PHYSICS LETTERS | - |
dc.identifier.doi | 10.1063/1.122864 | - |
dc.embargo.liftdate | 9999-12-31 | - |
dc.embargo.terms | 9999-12-31 | - |
dc.contributor.localauthor | Cho, Yong-Hoon | - |
dc.contributor.nonIdAuthor | Schmidt, TJ | - |
dc.contributor.nonIdAuthor | Bidnyk, S | - |
dc.contributor.nonIdAuthor | Fischer, AJ | - |
dc.contributor.nonIdAuthor | Song, JJ | - |
dc.contributor.nonIdAuthor | Keller, S | - |
dc.contributor.nonIdAuthor | Mishra, UK | - |
dc.contributor.nonIdAuthor | DenBaars, SP | - |
dc.description.isOpenAccess | N | - |
dc.type.journalArticle | Article | - |
dc.subject.keywordPlus | CONTINUOUS-WAVE OPERATION | - |
dc.subject.keywordPlus | STRUCTURE LASER-DIODES | - |
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