Laser action in GaN pyramids grown on, (111) silicon by selective lateral overgrowth

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Laser action was observed in GaN pyramids under strong optical pumping at room temperature. The pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. Each pyramid had a 15-mu m-wide hexagonal base and was on average 15 mu m in height. The pyramids were individually pumped, imaged, and spectrally analyzed through a high-magnification telescope system using a high-density pulsed excitation source. Under high levels of optical pumping, multimode laser at room temperature was observed. The integrated emission intensity for both spontaneous and lasing peaks was studied as a function of excitation power density. The effects of pyramid geometry and short-pulse excitation on the multimode nature of laser oscillations inside of the pyramids is discussed. This study suggests that GaN microstructures could potentially be used as pixel elements and high-density two-dimensional laser arrays. (C) 1998 American Institute of Physics. [S0003-6951(98)02742-9].
Publisher
AMER INST PHYSICS
Issue Date
1998-10
Language
English
Article Type
Article
Keywords

VAPOR-PHASE EPITAXY; SAPPHIRE

Citation

APPLIED PHYSICS LETTERS, v.73, no.16, pp.2242 - 2244

ISSN
0003-6951
DOI
10.1063/1.121689
URI
http://hdl.handle.net/10203/76019
Appears in Collection
PH-Journal Papers(저널논문)
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