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| NO | Title, Author(s) (Publication Title, Volume Issue, Page, Issue Date) |
|---|---|
| Stability of boron dopants near the interface between Si and amorphous SiO2 Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, 3rd ACCMS Working Group Meeting on Advances in Nano-device Simulation v. no. , ACCMS , 2011-03 | |
| Schottky barriers and work functions of Ni/HfO2 and Ni/SiO2 gate stacks Noh, HK; Oh, Y. J.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011 | |
| First-principles study on boron segregation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 한국물리학회 가을학술논문발표회, 한국물리학회, 2010-10 | |
| Segregation of B dopants in Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 6th KIAS Electronic Structure Calculation Workshop, KIAS, 2010-06 | |
| Stability of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ry, B.; Chang, Kee-Joo, The 18th Korean Conference on Semiconductors, KCS, 2011-02 | |
| Boron segregation and effect of point defects in Si/SiO2 interface Oh, Y. J.; Noh, H.-K.; Chang, Kee-Joo, The 14th Asian Workshop on First-Principles Electronic Structure Calculations, The University of Tokyo, 2011 | |
| Stability and segregation of boron dopants at the Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, 2011 Materials Research Society (MRS) Spring Meeting, Materials Research Society, 2011-04 | |
| Diffusion and segregation of B dopants at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, The 13th Asian Workshop on First-Principles Electronic Structure Calculations, 2010-11 | |
| Ab initio study of boron segregation and deactivation at Si/SiO2 interface Oh, Y. J.; Hwang, J.-H.; Noh, H.-K.; Bang, J.; Ryu, B.; Chang, Kee-Joo, International Union of Materials Research Societies - International Conference on Electronic Materials 2010, 2010-08 |
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