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Browse "MS-Journal Papers(저널논문)" by Author Yoon, Sung-Min

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Showing results 1 to 32 of 32

1	A Low-Power Scan Driver Circuit for Oxide TFTs Pi, Jae-Eun; Ryu, MinKi; Hwang, Chi-Sun; Yang, ShinHyuk; Park, Sang-Hee Ko; Yoon, Sung-Min; Leem, HongKyun; et al, IEEE ELECTRON DEVICE LETTERS, v.33, no.8, pp.1144 - 1146, 2012-08
2	A simple shift register circuit for depletion-mode oxide TFTs Pi, Jae-Eun; Ryu, Min Ki; Hwang, Chi-Sun; Park, Sang-Hee Ko; Yoon, Sung-Min; Lym, HongKyun; Kim, YeonKyung; et al, SOLID-STATE ELECTRONICS, v.79, pp.2 - 6, 2013-01
3	Analytical Modeling of IGZO Thin-Film Transistors Based on the Exponential Distribution of Deep and Tail States Shin, Jae-Heon; Hwang, Chi-Sun; Cheong, Woo-Seok; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Minki; Yoon, Sung-Min; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.527 - 530, 2009-01
4	Bending characteristics of ferroelectric poly(vinylidene fluoride trifluoroethylene) capacitors fabricated on flexible polyethylene naphthalate substrate Yoon, Sung-Min; Jung, Soon-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Yu, Byoung-Gon; Ishiwara, Hiroshi, CURRENT APPLIED PHYSICS, v.11, no.3, pp.219 - 224, 2011-05
5	Bilayered Etch-Stop Layer of Al2O3/SiO2 for High-Mobility In-Ga-Zn-O Thin-Film Transistors Park, Sang-Hee Ko; Kim, Jong Woo; Ryu, Min-Ki; Pi, Jae-Eun; Hwang, Chi-Sun; Yoon, Sung-Min, JAPANESE JOURNAL OF APPLIED PHYSICS, v.52, no.10, 2013-10
6	Characterization of Nonvolatile Memory Behaviors of Al/Poly(vinylidene fluoride-trifluoroethylene)/Al2O3/ZnO Thin-Film Transistors Yoon, Sung-Min; Yang, Shin-Hyuk; Byun, Chun-Won; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Kang, Seung-Youl; et al, JAPANESE JOURNAL OF APPLIED PHYSICS, v.49, no.4, 2010
7	Comparative studies on electrical bias temperature instabilities of In-Ga-Zn-O thin film transistors with different device configurations Ryu, Min-Ki; Park, Sang-Hee Ko; Hwang, Chi-Sun; Yoon, Sung-Min, SOLID-STATE ELECTRONICS, v.89, pp.171 - 176, 2013-11
8	Device reliability under electrical stress and photo response of oxide TFTs Park, Sang-Hee Ko; Ryu, Min-Ki; Yoon, Sung-Min; Yang, Shinhyuk; Hwang, Chi-Sun; Jeon, Jae-Hong, JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, v.18, no.10, pp.779 - 788, 2010-10
9	Double-layered passivation film structure of Al2O3/SiNx for high mobility oxide thin film transistors Park, Sang-Hee Ko; Ryu, Min-Ki; Oh, Himchan; Hwang, Chi-Sun; Jeon, Jae-Hong; Yoon, Sung-Min, JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, v.31, no.2, 2013-03
10	Effect of Double-Layered Al2O3 Gate Insulator on the Bias Stability of ZnO Thin Film Transistors Yoon, Sung-Min; Park, Sang-Hee Ko; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.8, pp.264 - 267, 2010
11	Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3 and ferroelectric polymer Yoon, Sung-Min; Yang, Shin-Hyuk; Park, Sang-Hee Ko; Jung, Soon-Won; Cho, Doo-Hee; Byun, Chun-Won; Kang, Seung-Youl; et al, JOURNAL OF PHYSICS D-APPLIED PHYSICS, v.42, no.24, 2009-12
12	Effects of barrier layers on the electrical behaviors of phase-change memory devices using Sb-rich Ge-Sb-Te films Yoon, Sung-Min; Choi, Kyu-Jeong; Park, Sang-Hee Ko; Lee, Seung-Yun; Park, Young-Sam; Yu, Byoung-Gon, INTEGRATED FERROELECTRICS, v.93, no.1, pp.75 - 82, 2007
13	Electrical Characterization of Metal-Insulator-Semiconductor Capacitors Having Double-Layered Atomic-Layer-Deposited Al2O3 and ZnO for Transparent Thin Film Transistor Applications Yoon, Sung-Min; Park, Sang-Hee Ko; Byun, Chun-Won; Yang, Shin-Hyuk; Hwang, Chi-Sun, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.157, no.7, pp.727 - 733, 2010
14	Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator Yang, Shinhyuk; Lee, Jeong-Ik; Park, Sang-Hee Ko; Cheong, Woo-Seok; Cho, Doo-Hee; Yoon, Sung-Min; Byun, Chun-Won; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.446 - 448, 2010-05
15	Fabrication of oxide TFTs with Al2O3/ZnO gate stacks patterned using a dry etching method Yoon, Sung-Min; Park, Sang-Hee Ko; Hwang, Chi-Sun; Chu, Hye Yong; Cho, Kyoung Ik, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.11, no.2, pp.15 - 18, 2008
16	Fabrication of Silicon-Oxide Thin Film by Using Ionized Physical Vapor Deposition and Application to Gate Insulators in Transparent Thin-Film Transistors Cheong, Woo-Seok; Hwang, Chi-Sun; Shin, Jae-Heon; Park, Sang-Hee Ko; Yoon, Sung-Min; Cho, Doo-Hee; Ryu, Minki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.54, no.1, pp.473 - 477, 2009-01
17	Flexible Nonvolatile Memory Thin-Film Transistor Using Ferroelectric Copolymer Gate Insulator and Oxide Semiconducting Channel Yoon, Sung-Min; Yang, Shinhyuk; Park, Sang-Hee Ko, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.158, no.9, pp.892 - 896, 2011
18	Fully Transparent Non-volatile Memory Thin-Film Transistors Using an Organic Ferroelectric and Oxide Semiconductor Below 200 degrees C Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chunwon; Park, Sang-Hee K.; Cho, Doo-Hee; Jung, Soon-Won; Kwon, Oh-Sang; et al, ADVANCED FUNCTIONAL MATERIALS, v.20, no.6, pp.921 - 926, 2010-03
19	Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; et al, APPLIED PHYSICS LETTERS, v.96, no.23, 2010-06
20	Low-Temperature Processed Flexible In-Ga-Zn-O Thin-Film Transistors Exhibiting High Electrical Performance Yang, Shinhyuk; Bak, Jun Yong; Yoon, Sung-Min; Ryu, Min Ki; Oh, Himchan; Hwang, Chi-Sun; Kim, Gi Heon; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.12, pp.1692 - 1694, 2011-12
21	Nanoscale Silver-Based Al-Doped ZnO Multilayer Transparent-Conductive Oxide Films Cho, Hyun-Jin; Park, Kyung-Woo; Ahn, Jun-Ku; Seong, Nak-Jin; Yoon, Soon-Gil; Park, Won-Ho; Yoon, Sung-Min; et al, JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.156, no.8, pp.215 - 220, 2009
22	Nondestructive Readout Operation of Oxide-Thin-Film-Transistor-Based 2T-Type Nonvolatile Memory Cell Yoon, Sung-Min; Byun, Chun-Won; Yang, Shinhyuk; Park, Sang-Hee Ko; Cho, Doo-Hee; Jung, Soon-Won; Kang, Seung-Youl; et al, IEEE ELECTRON DEVICE LETTERS, v.31, no.2, pp.138 - 140, 2010-02
23	Nonvolatile memory thin-film transistors using an organic ferroelectric gate insulator and an oxide semiconducting channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Ryu, Min-Ki; Park, Sang-Hee Ko; Kim, ByeongHoon; et al, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.26, no.3, 2011-03
24	Nonvolatile memory transistors using solution-processed zinc-tin oxide and ferroelectric poly(vinylidene fluoride-trifluoroethylene) Yoon, Sung-Min; Jung, Soon-Won; Yang, Shin-Hyuk; Byun, Chun-Won; Hwang, Chi-Sun; Park, Sang-Hee Ko; Ishiwara, Hiroshi, ORGANIC ELECTRONICS, v.11, no.11, pp.1746 - 1752, 2010-11
25	Oxide Semiconductor-Based Organic/Inorganic Hybrid Dual-Gate Nonvolatile Memory Thin-Film Transistor Yoon, Sung-Min; Yang, Shinhyuk; Ryu, Min-Ki; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; et al, IEEE TRANSACTIONS ON ELECTRON DEVICES, v.58, no.7, pp.2135 - 2142, 2011-07
26	Oxide-Thin-Film-Transistor-Based Ferroelectric Memory Array Kim, Byeong Hoon; Byun, Chun Won; Yoon, Sung-Min; Yang, Shin Hyuk; Jung, Soon-Won; Ryu, Min Ki; Park, Sang-Hee Ko; et al, IEEE ELECTRON DEVICE LETTERS, v.32, no.3, pp.324 - 326, 2011-03
27	Photon-accelerated negative bias instability involving subgap states creation in amorphous In-Ga-Zn-O thin film transistor Oh, Himchan; Yoon, Sung-Min; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Park, Sang-Hee Ko, APPLIED PHYSICS LETTERS, v.97, no.18, 2010-11
28	See-Through Nonvolatile Memory Thin-Film Transistors Using a Ferroelectric Copolymer Gate Insulator and an Oxide Semiconductor Channel Yoon, Sung-Min; Yang, Shinhyuk; Byun, Chun-Won; Jung, Soon-Won; Park, Sang-Hee Ko; Cho, Doo-Hee; Ryu, Min-Ki; et al, JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.58, no.5, pp.1494 - 1499, 2011-05
29	Solution-Processed Zinc Indium Oxide Transparent Nonvolatile Memory Thin-Film Transistors with Polymeric Ferroelectric Gate Insulator Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Ishiwara, Hiroshi, ELECTROCHEMICAL AND SOLID STATE LETTERS, v.13, no.5, pp.141 - 143, 2010
30	Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor Oh, Himchan; Yoon, Sung-Min; Ryu, Min Ki; Hwang, Chi-Sun; Yang, Shinhyuk; Park, Sang-Hee Ko, APPLIED PHYSICS LETTERS, v.98, no.3, 2011-01
31	Vertical Channel ZnO Thin-Film Transistors Using an Atomic Layer Deposition Method Hwang, Chi-Sun; Park, Sang-Hee Ko; Oh, Himchan; Ryu, Min-Ki; Cho, Kyoung-Ik; Yoon, Sung-Min, IEEE ELECTRON DEVICE LETTERS, v.35, no.3, pp.360 - 362, 2014-03
32	Water-related abnormal instability of transparent oxide/organic hybrid thin film transistors Yang, Shinhyuk; Hwang, Chi-Sun; Lee, Jeong-Ik; Yoon, Sung-Min; Ryu, Min-Ki; Cho, Kyoung-Ik; Park, Sang-Hee Ko; et al, APPLIED PHYSICS LETTERS, v.98, no.10, 2011-03

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