Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

Abstract

We fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm(2)/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V-T) of 3.10 V, and an on-off ratio of 3.9 x 10(9). The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.