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College of Engineering(공과대학)Dept. of Materials Science and Engineering(신소재공학과)MS-Journal Papers(저널논문)

Environmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator

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dc.contributor.authorYang, Shinhyukko
dc.contributor.authorLee, Jeong-Ikko
dc.contributor.authorPark, Sang-Hee Koko
dc.contributor.authorCheong, Woo-Seokko
dc.contributor.authorCho, Doo-Heeko
dc.contributor.authorYoon, Sung-Minko
dc.contributor.authorByun, Chun-Wonko
dc.contributor.authorHwang, Chi-Sunko
dc.contributor.authorChu, Hye-Yongko
dc.contributor.authorCho, Kyoung-Ikko
dc.contributor.authorAhn, Taekko
dc.contributor.authorChoi, Yoojeongko
dc.contributor.authorYi, Mi Hyeko
dc.contributor.authorJang, Jinko
dc.date.accessioned2015-11-20T12:50:35Z-
dc.date.available2015-11-20T12:50:35Z-
dc.date.created2014-04-17-
dc.date.created2014-04-17-
dc.date.issued2010-05-
dc.identifier.citationIEEE ELECTRON DEVICE LETTERS, v.31, no.5, pp.446 - 448-
dc.identifier.issn0741-3106-
dc.identifier.urihttp://hdl.handle.net/10203/201728-
dc.description.abstractWe fabricated environmentally stable and transparent organic/oxide hybrid transistor on a glass substrate using the conventional photolithography. The obtained device, which was composed of an In-Ga-Zn-O active layer/soluble polyimide (KSPI) organic insulator, showed a mobility of 6.65 cm(2)/Vs, a subthreshold swing slope of 350 mV/decade, a threshold voltage (V-T) of 3.10 V, and an on-off ratio of 3.9 x 10(9). The transistor also showed good uniformity characteristics and was found to be environmentally stable for 90 days under ambient conditions.-
dc.languageEnglish-
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC-
dc.subjectTHIN-FILM TRANSISTORS-
dc.subjectLIGHT-EMITTING-DIODE-
dc.subjectHIGH-PERFORMANCE-
dc.subjectVOLTAGE-
dc.titleEnvironmentally Stable Transparent Organic/Oxide Hybrid Transistor Based on an Oxide Semiconductor and a Polyimide Gate Insulator-
dc.typeArticle-
dc.identifier.wosid000277047300022-
dc.identifier.scopusid2-s2.0-77951878864-
dc.type.rimsART-
dc.citation.volume31-
dc.citation.issue5-
dc.citation.beginningpage446-
dc.citation.endingpage448-
dc.citation.publicationnameIEEE ELECTRON DEVICE LETTERS-
dc.identifier.doi10.1109/LED.2010.2043334-
dc.contributor.localauthorPark, Sang-Hee Ko-
dc.contributor.nonIdAuthorYang, Shinhyuk-
dc.contributor.nonIdAuthorLee, Jeong-Ik-
dc.contributor.nonIdAuthorCheong, Woo-Seok-
dc.contributor.nonIdAuthorCho, Doo-Hee-
dc.contributor.nonIdAuthorYoon, Sung-Min-
dc.contributor.nonIdAuthorByun, Chun-Won-
dc.contributor.nonIdAuthorHwang, Chi-Sun-
dc.contributor.nonIdAuthorChu, Hye-Yong-
dc.contributor.nonIdAuthorCho, Kyoung-Ik-
dc.contributor.nonIdAuthorAhn, Taek-
dc.contributor.nonIdAuthorChoi, Yoojeong-
dc.contributor.nonIdAuthorYi, Mi Hye-
dc.contributor.nonIdAuthorJang, Jin-
dc.type.journalArticleArticle-
dc.subject.keywordAuthorOxide-
dc.subject.keywordAuthorsputtering-
dc.subject.keywordAuthorthin-film transistor (TFT)-
dc.subject.keywordAuthortransparent-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusLIGHT-EMITTING-DIODE-
dc.subject.keywordPlusHIGH-PERFORMANCE-
dc.subject.keywordPlusVOLTAGE-
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